17th International Conference on Crystal Growth and Epitaxy...

 on-line journal

Presenting person

August 14th, Wednesday

14:00 WeO2 - Marek Godlewski (Poland) - T03: Wide bandgap semiconductors - Room C, Auditorium Maximum
14:00 00:30:00 Invited oral Robert Dwilinski Ammonothermal growth of GaN substrates
14:30 00:30:00 Invited oral Yusuke Mori Fabrication of bulk GaN crystals by Na flux method with a necking technique and a coalescence growth
14:45 00:15:00 Oral Takahiro Kawamura First-principles calculation of the carbon-added Na-flux GaN growth on GaN(0001)
15:00 00:15:00 Oral Boris Epelbaum Processes of dissociative evaporation involved into sublimation growth of bulk AlN crystals
15:15 00:15:00 Oral Yoshihiro Kangawa Influence of growth orientation on microstructure of AlN grown by solid-source solution growth (3SG) method
15:30 00:15:00 Oral Rajappan Radhakrishnan Sumathi Achievement and advancement in the hetero-epitaxial growth of AlN single crystals on SiC substrates by PVT approach
16:00 WeP-T03 - Room 105, Old Library
16:00 #We1 Poster Igor C. Avetissov Impurity Influence On Polytype Generation At SiC Vapor Growth
16:00 #We2 Poster Jose H. Dias da Silva Substrate orientation, temperature and energetic atomic collisions effects on the structure of GaN films grown by reactive sputtering
16:00 #We3 Poster Jürgen Erlekampf Evaluation of different baffle geometries in an ammonothermal system by a local numerical 3D model
16:00 #We4 Poster Katarzyna Gas Physical properties of unique ZnO single crystals from Oława Foundry
16:00 #We5 Poster Sylwia Gierałtowska Growth of zinc oxide and dielectric films using Atomic Layer Deposition method from organic precursors
16:00 #We6 Poster Daniela Gogova A study on n-type doping of β-Ga2O3 layers grown by MOCVD
16:00 #We7 Poster Takahide Hirasaki Growth of thick InGaN by Hydride Vapor Phase Epitaxy
16:00 #We8 Poster Soon-Ku Hong Crystal orientation variation of nonpolar AlN films grown with III/V ratio on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy
16:00 #We9 Poster Hyojin Kim Zinc oxide wire-like thin films as nitrogen monoxide gas sensor
16:00 #We10 Poster Kamil Klosek MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications 
16:00 #We11 Poster Nazar O. Kovalenko Optical and mechanical properties of a hexagonal single crystals of Zn1-xMnxS:Fe2+ solid solution
16:00 #We12 Poster Baskar Krishnan Studies on dislocation and surface morphology of AlxGa1-xN/GaN heterostructures grown by MOCVD
16:00 #We13 Poster Baskar Krishnan Growth and characterization of AlxGa1-xN/GaN/ Al2O3 heterostuctures  
16:00 #We14 Poster Ching-Shun Ku Strain relaxation behavior of ultra-thin ZnO films on m-plane sapphire growth by atomic layer deposition
16:00 #We15 Poster Vladimir I. Kushnirenko Structural and luminescent properties of ZnO thin films doped with Cu, Ga, Ag
16:00 #We16 Poster Chih-Ming Lin Synthesis and physical properties for Al-doped ZnO nanostructure powders with the chemical precipitation method
16:00 #We17 Poster Kung Liang Lin Evaluations of GaN film grown on patterned Si (111) templates substrates
16:00 #We18 Poster Hisashi Murakami Influence of surface orientation on the In-incorporation of HVPE-grown InGaN studied by theoretical calculations
16:00 #We19 Poster Grzegorz Muziol Far field pattern of AlGaN cladding free blue laser diodes grown by PAMBE
16:00 #We20 Poster Dmitrii Nechaev Growth of atomically-smooth droplet-free AlxGa1-xN (x>0.5) layers by plasma assisted molecular beam epitaxy under strong metal-rich conditions
16:00 #We21 Poster Tadashi Ohachi Activity modulation and role of nitrogen radicals in PA-MBE for growth of group III nitrides and their alloys
16:00 #We22 Poster Tetsuo Ozawa AlN single crystal growth on sapphire substrate under atomic nitrogen plasma
16:00 #We23 Poster Jacek Piechota A density functional  theory study of the Zn, O, O2, and H2O adsorption on the polar ZnO(0001) and ZnO(000-1) surfaces
16:00 #We24 Poster Ewa Przezdziecka Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
16:00 #We25 Poster Ewa Przezdziecka Grown ZnMgO/ZnO/ZnMgO heterostructures on p-type Si(111) by MBE method
16:00 #We26 Poster Ewa Przezdziecka Dual-acceptor doped p-ZnO:(As+Sb)/n-GaN heterojunctions grown by PA-MBE as a highly selective UV detector
16:00 #We27 Poster Katarzyna Racka Growth of SiC by PVT method with different sources of the cerium impurity, CeO2 or CeSi2
16:00 #We28 Poster Konrad Sakowski Drift-diffusion simulations of gallium nitride based heterostructures
16:00 #We29 Poster Dietmar Siche Vapour phase growth of single crystalline GaN layers in hot microwave plasma
16:00 #We30 Poster Paweł Skupiński The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
16:00 #We31 Poster Pawel Strak Absorption and emission spectra of AlN/GaN superlattice structures by DFT methods
16:00 #We32 Poster Emil Tymicki The influence of the PVT growth conditions on the SiC crystal shape
16:00 #We33 Poster Marya E. Voronchikhina The influence of atmosphere on β-Ga2O3  single crystal growth by floating zone
16:00 #We34 Poster Tomasz Wejrzanowski Modeling of growth kinetics of SiC single crystal in PVT process
16:00 #We35 Poster Ya-Fen Wu Investigations on recombination mechanisms in InGaN/AlGaN multiple quantum wells
16:00 #We36 Poster JunShuai Xue Investigation of TMIn pulse duration effect on the properties of InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
16:00 #We37 Poster Tomohiro Yamaguchi RF-MBE growth of GaN films on nitridated α-Ga2O3 buffer layer
16:00 #We38 Poster Jigang Yin Direct Comparison of ZnO single crystal grown by the hydrothermal and Pressurized melt growth method
17:30 Break

August 15th, Thursday

10:20 ThO1 - Lutz Geelhaar (Germany) - T03: Wide bandgap semiconductors - Room C, Auditorium Maximum
10:20 00:30:00 Invited oral Grzegorz Łuka Zinc oxide films grown by atomic layer deposition: from material properties to device applications
10:50 00:15:00 Oral Mengde Ren Hydrothermal growth  of bulk ZnO:Ga crystals and their physical properties
11:05 00:15:00 Oral Łukasz Wachnicki Epitaxial growth and characterization of zinc oxide nanorods obtained by the hydro-thermal method
11:20 00:15:00 Oral Bartłomiej S. Witkowski Hydrothermal growth of ZnO nanorods for solar cells applications
11:35 00:15:00 Oral Norihiro Suzuki Growth of corundum-structured α-(InxGa1-x)2O3 alloy thin films on sapphire substrates with buffer layers
11:50 00:15:00 Oral Joan J. Carvajal Nanoporous GaN epitaxial layers grown by Chemical Vapor Deposition
12:05 00:15:00 Oral Shigeya Naritsuka c-plane GaN selective growth by liquid phase electroepitaxy under atmospheric pressure
12:20 Lunch (EMCG meeting)
14:00 ThO2 - Robert Dwilinski (Poland) - T03: Wide bandgap semiconductors - Room C, Auditorium Maximum
14:00 00:30:00 Invited oral Lutz Geelhaar Nucleation and growth of GaN nanowires by molecular beam epitaxy
14:30 00:15:00 Oral Marta Sobanska Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
14:45 00:15:00 Oral Marcin Sarzynski GaN substrates with variable surface miscut for laser diode applications
15:00 00:15:00 Oral Valentin N. Jmerik Plasma-assisted molecular beam epitaxy of AlGaN-based quantum well structures demonstrating spontaneous and stimulated emission in mid-ultraviolet spectral range
15:15 00:15:00 Oral Ferdinand Scholz Semipolar GaInN-GaN hetero structures on large area substrates
15:30 00:15:00 Oral JunShuai Xue Pulsed metal organic chemical vapor deposition growth, fabrication, and characterization of nearly lattice-matched InAlN/GaN high electron mobility transistors on sapphire substrate
15:45 00:15:00 Oral Pawel Strak Absorption and emission spectra of InN/GaN superlattice structures by DFT methods
16:00 Coffee
16:30 ThO3 - to be defined - T03: Wide bandgap semiconductors - Room C, Auditorium Maximum
16:30 00:30:00 Invited oral Jawad Ul Hassan Advance in Epitaxial Growth of SiC for High Power Devices
17:00 00:15:00 Oral Christian Ehlers HCl assisted growth of thick 4H-SiC epilayers by chemical vapour deposition
17:15 00:15:00 Oral Keiko Masumoto Suppression of step bunching generated on 4H-SiC Si-face substrates with vicinal off-angle
17:30 00:15:00 Oral Johji Nishio C-face epitaxial growth of 4H-SiC on quasi-150mm-diameter wafers
17:45 00:15:00 Oral Koichi Kakimoto Study of the effect of doped nitrogen and aluminum on polytype stability during PVT growth of SiC using 2D nucleation theory
18:00 00:15:00 Oral Takeshi Mitani Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C based solutions under various temperature gradient conditions
18:15 00:15:00 Oral Kazuaki Seki Growth of high quality 3C-SiC on hexagonal SiC seed using TSSG method
18:30 Break
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