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dr Kazuaki Seki

e-mail:
phone: +81-52-7893249
fax: +81-52-7893248
web:
interest(s):

Affiliation:

Garaduate School of Enginnering, Nagoya University

address: Nagoya university, Furo-cyo, Chikusa-ku, Nagoya, Japan, Nagoya, 464-8603, Japan
phone: +81-52-7893202
fax: +81-52-7893201
web:

Participant:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Growth of high quality 3C-SiC on hexagonal SiC seed using TSSG method

Publications:
  1. Effect of solution flow velocity on the step bunching in solution growth of SiC
  2. Evolution of threading screw dislocation conversion during solution growth of 4H-SiC
  3. Growth of high quality 3C-SiC on hexagonal SiC seed using TSSG method
  4. Ultra-high quality SiC crystal grown by solution method utilizing the conversion from threading dislocations to basal plane defects



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