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dr Johji Nishio |
| e-mail: | |
| phone: | +81-44-5492142 |
| fax: | +81-44-5201501 |
| web: | |
| interest(s): | |
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Affiliation: |
R D Partnership for Future Power Electronics Technology|
| address: | Onogawa 16-1, Tsukuba, 305-8569, Japan | | phone: | | | fax: | | | web: | | |
Affiliation: |
Toshiba Reserch and Development Center|
| address: | 1, Komukai Toshiba-cho, Saiwaiku, Kawasaki, 212-8582, Japan | | phone: | +81-44-5492142 | | fax: | +81-44-5201501 | | web: | http://www.toshiba.co.jp | |
Participant: |
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Publications: |
- C-face epitaxial growth of 4H-SiC on quasi-150mm-diameter wafers
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