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dr Shigeya Naritsuka

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Affiliation:

Faculty of Science and Technology, Meijo University

address: 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, Nagoya, 468-8502, Japan
phone: +81-52-8321151
fax: +81-52-8321244
web: http://www.meijo-u.ac.jp/

Participant:

15th Summer School on Crystal Growth - ISSCG-15

began: 2013-08-04
ended: 2013-08-10
Presented:

Participant:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
c-plane GaN selective growth by liquid phase electroepitaxy under atmospheric pressure

Publications:
  1. Behavior of defects in a-plane GaN films grown by Low-Angle-Incidence Microchannel Epitaxy (LAIMCE)
  2. c-plane GaN selective growth by liquid phase electroepitaxy under atmospheric pressure
  3. Selective growth of (001) GaAs using patterned graphene mask
  4. Selective growth of (001) GaAs with graphene mask



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