17th International Conference on Crystal Growth and Epitaxy

No.	Presenting person	Title
We208	Keita Abe	Numerical simulations of heat and mass transfer in traveling liquidus-zone crystal growth process of SiGe under microgravity
We209	Igor C. Avetissov	Czochralski growth of NaNO₃-LiNO₃ solid solution single crystals using axial vibrational control technique
We210	Igor C. Avetissov	Optimization of vibrating baffle configuration at AVC-CZ crystal growth
We211	Mircea Cablea	Directional solidification of Silicon under the influence of traveling magnetic field
We212	Jyh-Chen Chen	Numerical Simulation of Oxygen Transport during the Czochralski Silicon Crystal Growth with a Cusp Magnetic Field
We213	Jyh-Chen Chen	Three-dimensional numerical simulation of flow, thermal and oxygen distributions for a Czochralski silicon growth with in a transverse magnetic field
We214	Dattatray Gadkari	Detached Growth: Unfolding the four decades growth mystery in vertical directional solidification technique on Earth
We215	Arnold Gucsik	Calcite nucleation in microgravity of a sounding rocket experiment
We216	Thomas Jauß	Behaviour of Particle Depots in Molten Silicon Under Terrestrial And Microgravity Conditions
We217	Gennadiy N. Kozhemyakin	Simulation of ultrasound influence on melt convection for the growth of striation-free Ga_xIn_1-xSb and Si single crystals by the Czochralski method
We218	Andrey P. Sadovskiy	Energy efficiency and adaptability of the AVC technique
We219	Alexey E. Voloshin	Revision of one-dimensional analytical models of effective segregation coefficient and their application for recovering the crystal growth conditions of space grown GaSb:Te
We220	Olga Gusakova	The influence of melt flow on grain growth during ultrafast quenching from the melt

17th International Conference on Crystal Growth and Epitaxy...

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