17th International Conference on Crystal Growth and Epitaxy

Time	Duration	Type	Presenting person	Title
August 15th, Thursday
14:00	00:30:00	Invited oral	Michael Heuken	Next generation production MOVPE - on the role of in-situ metrology for process control and yield enhancement
14:30	00:30:00	Invited oral	Markus Pristovsek	Growth monitoring of nitride semiconductors at its limit
15:00	00:15:00	Oral	Motoaki Iwaya	In situ X-ray diffraction monitoring of GaInN growth by metalorganic vapor phase epitaxy
15:15	00:15:00	Oral	Guangxu Ju	Continuous in situ X-ray reflectivity measurement on InGaN epitaxial growth by MOVPE
16:30	00:30:00	Invited oral	Kiyoshi Kanisawa	Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined system
17:00	00:30:00	Invited oral	Masamitu Takahasi	In-situ monitoring of molecular-beam epitaxial growth of zero-, one-, and two-dimensional structures using synchrotron X-ray diffraction
17:30	00:15:00	Oral	Takashi Toujyou	3-dimensional InAs island growth on GaAs(001) at 500 ^oC observed by STMBE system

17th International Conference on Crystal Growth and Epitaxy...