Time
|
Duration
|
Type
|
Presenting person
|
Title
|
August 14th, Wednesday |
|
| 14:00 |
00:30:00 |
Invited oral |
Robert Dwilinski |
Ammonothermal growth of GaN substrates |
| 14:30 |
00:30:00 |
Invited oral |
Yusuke Mori |
Fabrication of bulk GaN crystals by Na flux method with a necking technique and a coalescence growth |
| 14:45 |
00:15:00 |
Oral |
Takahiro Kawamura |
First-principles calculation of the carbon-added Na-flux GaN growth on GaN(0001) |
| 15:00 |
00:15:00 |
Oral |
Boris Epelbaum |
Processes of dissociative evaporation involved into sublimation growth of bulk AlN crystals |
| 15:15 |
00:15:00 |
Oral |
Yoshihiro Kangawa |
Influence of growth orientation on microstructure of AlN grown by solid-source solution growth (3SG) method |
| 15:30 |
00:15:00 |
Oral |
Rajappan Radhakrishnan Sumathi |
Achievement and advancement in the hetero-epitaxial growth of AlN single crystals on SiC substrates by PVT approach |
August 15th, Thursday |
|
| 10:20 |
00:30:00 |
Invited oral |
Grzegorz Łuka |
Zinc oxide films grown by atomic layer deposition: from material properties to device applications |
| 10:50 |
00:15:00 |
Oral |
Mengde Ren |
Hydrothermal growth of bulk ZnO:Ga crystals and their physical properties |
| 11:05 |
00:15:00 |
Oral |
Łukasz Wachnicki |
Epitaxial growth and characterization of zinc oxide nanorods obtained by the hydro-thermal method |
| 11:20 |
00:15:00 |
Oral |
Bartłomiej S. Witkowski |
Hydrothermal growth of ZnO nanorods for solar cells applications |
| 11:35 |
00:15:00 |
Oral |
Norihiro Suzuki |
Growth of corundum-structured α-(InxGa1-x)2O3 alloy thin films on sapphire substrates with buffer layers |
| 11:50 |
00:15:00 |
Oral |
Joan J. Carvajal |
Nanoporous GaN epitaxial layers grown by Chemical Vapor Deposition |
| 12:05 |
00:15:00 |
Oral |
Shigeya Naritsuka |
c-plane GaN selective growth by liquid phase electroepitaxy under atmospheric pressure |
| 14:00 |
00:30:00 |
Invited oral |
Lutz Geelhaar |
Nucleation and growth of GaN nanowires by molecular beam epitaxy |
| 14:30 |
00:15:00 |
Oral |
Marta Sobanska |
Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE |
| 14:45 |
00:15:00 |
Oral |
Marcin Sarzynski |
GaN substrates with variable surface miscut for laser diode applications |
| 15:00 |
00:15:00 |
Oral |
Valentin N. Jmerik |
Plasma-assisted molecular beam epitaxy of AlGaN-based quantum well structures demonstrating spontaneous and stimulated emission in mid-ultraviolet spectral range |
| 15:15 |
00:15:00 |
Oral |
Ferdinand Scholz |
Semipolar GaInN-GaN hetero structures on large area substrates |
| 15:30 |
00:15:00 |
Oral |
JunShuai Xue |
Pulsed metal organic chemical vapor deposition growth, fabrication, and characterization of nearly lattice-matched InAlN/GaN high electron mobility transistors on sapphire substrate |
| 15:45 |
00:15:00 |
Oral |
Pawel Strak |
Absorption and emission spectra of InN/GaN superlattice structures by DFT methods |
| 16:30 |
00:30:00 |
Invited oral |
Jawad Ul Hassan |
Advance in Epitaxial Growth of SiC for High Power Devices |
| 17:00 |
00:15:00 |
Oral |
Christian Ehlers |
HCl assisted growth of thick 4H-SiC epilayers by chemical vapour deposition |
| 17:15 |
00:15:00 |
Oral |
Keiko Masumoto |
Suppression of step bunching generated on 4H-SiC Si-face substrates with vicinal off-angle |
| 17:30 |
00:15:00 |
Oral |
Johji Nishio |
C-face epitaxial growth of 4H-SiC on quasi-150mm-diameter wafers |
| 17:45 |
00:15:00 |
Oral |
Koichi Kakimoto |
Study of the effect of doped nitrogen and aluminum on polytype stability during PVT growth of SiC using 2D nucleation theory |
| 18:00 |
00:15:00 |
Oral |
Takeshi Mitani |
Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C based solutions under various temperature gradient conditions |
| 18:15 |
00:15:00 |
Oral |
Kazuaki Seki |
Growth of high quality 3C-SiC on hexagonal SiC seed using TSSG method |
