Time
|
Duration
|
Type
|
Presenting person
|
Title
|
August 14th, Wednesday |
|
| 16:00 |
WeP-T05 - Room 107, Old Library |
| 16:00 |
#We84 |
Poster |
Madalin O. Bunoiu |
Effects of Crucible Coating on the Quality of Multi-crystalline Silicon Grown by a Bridgman Technique |
| 16:00 |
#We85 |
Poster |
Michael A. Gonik |
Material development for directional solidification of multicrystalline silicon by AHP method |
| 16:00 |
#We86 |
Poster |
Hironori Itoh |
Growth of Spherical Si Crystals on Porous Si3N4 Substrate that Repels Si Melt |
| 16:00 |
#We87 |
Poster |
Chung-Wen Lan |
Grain Control by Patterned Layers in Multi-crystalline Silicon Growth by Directional Solidification |
| 16:00 |
#We88 |
Poster |
Chung-Wen Lan |
Development of grain structures of multi-crystalline silicon in directional solidification |
| 16:00 |
#We89 |
Poster |
Ryo Matsumura |
Cooling-Rate-Controlled Rapid-Melting-Growth for Giant-Single-Crystal SiGe on Insulator |
| 16:00 |
#We90 |
Poster |
Yuta Nagai |
Crystal growth of MCZ silicon with ultra low carbon concentration |
| 16:00 |
#We91 |
Poster |
Radu-Andrei Negrila |
Study of resistivity and lifetime profiles in highly polluted multi-crystalline silicon grown in a graphite crucible by a Bridgman technique |
| 16:00 |
#We92 |
Poster |
Matīss Plāte |
Modelling of 3D features of molten zone in FZ silicon crystal growth |
| 16:00 |
#We93 |
Poster |
Anna Poklad |
Impurities, precipitates, and dislocations in multicrystalline silicon grown from well-mixed and poorly mixed melts |
| 16:00 |
#We94 |
Poster |
Noritaka Usami |
Fabrication of large-area Si-based photonic nanostructures coupled with Ge quantum dots and their application to solar cells |
| 17:30 |
Break |
August 15th, Thursday |
|
| 16:30 |
ThO3 - Kazuo Nakajima (Japan) - T05: Si/Ge for microelectronics and photovoltaics - Room A, Auditorium Maximum |
| 16:30 |
00:30:00 |
Invited oral |
Christian Reimann |
Challenges in material improvement and cost reduction for crystalline silicon for PV application |
| 17:00 |
00:15:00 |
Oral |
Chih-Chen Hsieh |
Improvement of multi-crystalline silicon solar ingot growth by using diffusion barriers |
| 17:15 |
00:15:00 |
Oral |
Kozo Fujiwara |
Crystal/melt interface morphology at grain boundaries of multicrystalline silicon |
| 17:30 |
00:15:00 |
Oral |
Hua-Kai Lin |
Three-dimensional phase field modeling of silicon thin-film growth during directional solidification: facet formation and grain competition |
| 17:45 |
00:15:00 |
Oral |
Ronit R. Prakash |
Modelling of unidirectional solidification of multicrystalline Si |
| 18:00 |
00:15:00 |
Oral |
Jeffrey J. Derby |
The Horizontal Ribbon Growth Process for Solar Silicon: Analysis of Stability and Segregation |
| 18:15 |
00:15:00 |
Oral |
Wenhan Zhao |
Quality evaluation of multi-crystalline silicon ingots produced in a directional solidification furnace with different theories |
| 18:30 |
Break |
August 16th, Friday |
|
| 08:30 |
FrO1 - Christian Reimann (Germany) - T05: Si/Ge for microelectronics and photovoltaics - Room A, Auditorium Maximum |
| 08:30 |
00:15:00 |
Oral |
Kohei Morishita |
Orientation analysis of multicrystalline silicon ingots for solar cells grown by noncontact crucible method |
| 08:45 |
00:15:00 |
Oral |
Kazuo Nakajima |
Growth of Si large single bulk crystals for solar cells using small crucibles with a given diameter by the Noncontact Crucible method |
| 09:00 |
00:15:00 |
Oral |
Leslie Lhomond |
Silicon crystallization by Kyropoulos process for photovoltaic applications |
| 09:15 |
00:15:00 |
Oral |
Xin Liu |
Analysis of Argon Flow on Mass Transport in a CZ-Si Crystal Growth by Using Full Compressible Flow Solver |
| 09:30 |
00:15:00 |
Oral |
Mukannan Arivanandhan |
Grown-in micro defects and photovoltaic characteristics of B and heavily Ge codoped CZ-Si |
| 09:45 |
00:15:00 |
Oral |
Toshinori Taishi |
Growth of heavily tin-doped Si |
| 10:00 |
00:15:00 |
Oral |
Michael Wünscher |
Guided gas flow as an effective mean to overcome crystal diameter limitations in FZ growth of large silicon crystals |
| 10:15 |
00:15:00 |
Oral |
Bing Gao |
Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions |
| 10:30 |
Coffee |
| 11:00 |
FrO2 - Albrecht Seidl (Germany) - T05: Si/Ge for microelectronics and photovoltaics - Room A, Auditorium Maximum |
| 11:00 |
00:30:00 |
Invited oral |
Erich Kasper |
Epitaxy of GeSi Heterostructures on Silicon Substrates |
| 11:30 |
00:15:00 |
Oral |
Kentarou Sawano |
Uniaxially strained Si/Ge heterostructures grown on selectively ion-implanted substrates |
| 11:45 |
00:15:00 |
Oral |
Jong-Hyeok Park |
Selective-Growth of (100)- and (111)- Ge Thin-Films on Insulator by Interfacial-Energy-Controlled Metal-Induced-Crystallization |
| 12:00 |
00:15:00 |
Oral |
Michael A. Gonik |
SiGe crystal growth in the absence of the crucible |
| 12:15 |
00:15:00 |
Oral |
Vitaly A. Moskovskih |
The low thermal gradient Cz technique as a way of growing of dislocation-free germanium crystals |
| 12:30 |
00:15:00 |
Oral |
Alexander Molchanov |
New improvements in industrial growth of silicon mono crystals for solar application by using Magnetic-Cz |
| 13:00 |
Closing ceremony |
