17th International Conference on Crystal Growth and Epitaxy...

 on-line journal

Time
 Duration
 Type
 Presenting person
 Title

August 14th, Wednesday
16:00 WeP-T05 - Room 107, Old Library
16:00 #We84 Poster Madalin O. Bunoiu Effects of Crucible Coating on the Quality of Multi-crystalline Silicon Grown by a Bridgman Technique
16:00 #We85 Poster Michael A. Gonik Material development for directional solidification of multicrystalline silicon by AHP method
16:00 #We86 Poster Hironori Itoh Growth of Spherical Si Crystals on Porous Si3N4 Substrate that Repels Si Melt
16:00 #We87 Poster Chung-Wen Lan Grain Control by Patterned Layers in Multi-crystalline Silicon Growth by Directional Solidification
16:00 #We88 Poster Chung-Wen Lan Development of grain structures of multi-crystalline silicon in directional solidification
16:00 #We89 Poster Ryo Matsumura Cooling-Rate-Controlled Rapid-Melting-Growth for Giant-Single-Crystal SiGe on Insulator
16:00 #We90 Poster Yuta Nagai Crystal growth of MCZ silicon with ultra low carbon concentration
16:00 #We91 Poster Radu-Andrei Negrila Study of resistivity and lifetime profiles in highly polluted multi-crystalline silicon grown in a graphite crucible by a Bridgman technique
16:00 #We92 Poster Matīss Plāte Modelling of 3D features of molten zone in FZ silicon crystal growth
16:00 #We93 Poster Anna Poklad Impurities, precipitates, and dislocations in multicrystalline silicon grown from well-mixed and poorly mixed melts
16:00 #We94 Poster Noritaka Usami Fabrication of large-area Si-based photonic nanostructures coupled with Ge quantum dots and their application to solar cells
17:30 Break

August 15th, Thursday

16:30 ThO3 - Kazuo Nakajima (Japan) - T05: Si/Ge for microelectronics and photovoltaics - Room A, Auditorium Maximum
16:30 00:30:00 Invited oral Christian Reimann Challenges in material improvement and cost reduction for crystalline silicon for PV application
17:00 00:15:00 Oral Chih-Chen Hsieh Improvement of multi-crystalline silicon solar ingot growth by using diffusion barriers
17:15 00:15:00 Oral Kozo Fujiwara Crystal/melt interface morphology at grain boundaries of multicrystalline silicon
17:30 00:15:00 Oral Hua-Kai Lin Three-dimensional phase field modeling of silicon thin-film growth during directional solidification: facet formation and grain competition
17:45 00:15:00 Oral Ronit R. Prakash Modelling of unidirectional solidification of multicrystalline Si
18:00 00:15:00 Oral Jeffrey J. Derby The Horizontal Ribbon Growth Process for Solar Silicon: Analysis of Stability and Segregation
18:15 00:15:00 Oral Wenhan Zhao Quality evaluation of multi-crystalline silicon ingots produced in a directional solidification furnace with different theories
18:30 Break

August 16th, Friday

08:30 FrO1 - Christian Reimann (Germany) - T05: Si/Ge for microelectronics and photovoltaics - Room A, Auditorium Maximum
08:30 00:15:00 Oral Kohei Morishita Orientation analysis of multicrystalline silicon ingots for solar cells grown by noncontact crucible method
08:45 00:15:00 Oral Kazuo Nakajima Growth of  Si large single bulk crystals for solar cells using small crucibles with a given diameter by the Noncontact Crucible method
09:00 00:15:00 Oral Leslie Lhomond Silicon crystallization by Kyropoulos process for photovoltaic applications
09:15 00:15:00 Oral Xin Liu Analysis of Argon Flow on Mass Transport in a CZ-Si Crystal Growth by Using Full Compressible Flow Solver
09:30 00:15:00 Oral Mukannan Arivanandhan Grown-in micro defects and photovoltaic characteristics of B and heavily Ge codoped CZ-Si
09:45 00:15:00 Oral Toshinori Taishi Growth of heavily tin-doped Si
10:00 00:15:00 Oral Michael Wünscher Guided gas flow as an effective mean to overcome crystal diameter limitations in FZ growth of large silicon crystals
10:15 00:15:00 Oral Bing Gao Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions
10:30 Coffee
11:00 FrO2 - Albrecht Seidl (Germany) - T05: Si/Ge for microelectronics and photovoltaics - Room A, Auditorium Maximum
11:00 00:30:00 Invited oral Erich Kasper Epitaxy of GeSi Heterostructures on Silicon Substrates
11:30 00:15:00 Oral Kentarou Sawano Uniaxially strained Si/Ge heterostructures grown on selectively ion-implanted substrates
11:45 00:15:00 Oral Jong-Hyeok Park Selective-Growth of (100)- and (111)- Ge Thin-Films on Insulator by Interfacial-Energy-Controlled Metal-Induced-Crystallization
12:00 00:15:00 Oral Michael A. Gonik SiGe crystal growth in the absence of the crucible
12:15 00:15:00 Oral Vitaly A. Moskovskih The low thermal gradient Cz technique as a way of growing of dislocation-free germanium crystals
12:30 00:15:00 Oral Alexander Molchanov New improvements in industrial growth of silicon mono crystals for solar application by using Magnetic-Cz
13:00 Closing ceremony
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