The grain control in multi-crystalline silicon directional solidification is crucial to crystal quality and thus their photoelectric conversion efficiency. To control the grain structures, the initial grain layer is crucial. In this study, we considered different layers for the initial growth either from holes or notches for this purpose. It was found that the grain structures could be better controlled. The growth from the patterned layer had a higher percentage of non-coherent grain boundaries and a more uniform grain structure. The grain orientation and structures were determined by electron back scattering diffraction (EBSD) and the defect density and photo luminance (PL) mappings were carried out. The relationship between the grain structures and the defects was further discussed.

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