Development of grain structures of multi-crystalline silicon from small spherical seeds with random orientations in directional solidification was investigated. The electron backscattered diffraction (EBSD) analyses of the grains at different pulling rates, i.e., 10, 50, and 200 mm/h, were carried out. It was found that the {112} orientation was dominant at the low crucible pulling speed, while {111} at the high pulling speeds. The percentage of {100} grains was found very low near the top of the ingots. The percentage of non-S grain boundaries was around 70% at the beginning and decreased with the solidification distance, while S3 grain boundaries or twins increased indicating the importance of twining in the development of grain structures.

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