17th International Conference on Crystal Growth and Epitaxy...

 on-line journal

Presenting person

August 14th, Wednesday

14:00 WeO2 - Michael Dudley (USA) - G07: Defect formation/elimination - Room D, Auditorium Maximum
14:00 00:30:00 Invited oral Balaji Raghothamachar Synchrotron Topography Studies of the Operation of Double-Ended Frank-Read Partial Dislocation Sources in 4H-SiC
14:30 00:15:00 Oral Eva-Regine Carl Grain and Subgrain Boundaries in Multi-Crystalline Silicon
14:45 00:15:00 Oral Thierry Duffar Experimental study of the grain boundary orientations in multi-crystalline silicon
15:00 00:15:00 Oral Vasif Mamedov Numerical study of dislocation formation during transient growth of multi-Si by the direct solidification technique
15:15 00:15:00 Oral Bing Gao Quantitative analysis of correlations between the generation of dislocations and its influencing factors during cylindrical monocrystalline silicon growth
15:30 00:15:00 Oral Moez Jomâa Numerical Analysis of the Effect of Growth Rate Variations on Defect Formation in Czochralski Grown Silicon
15:45 00:15:00 Oral Takao Abe Discrepancies between experimental results and simulations on point defects behavior during silicon crystal growth from the melt
16:00 WeP-G07 - Room 211, Old Library
16:00 #We195 Poster Mohsin Aziz Effect of Gamma Irradiation on deep levels detected by DLTS in GaAsxN1-x with different Nitrogen concentration
16:00 #We196 Poster Włodzimierz Bogdanowicz The growth rate impact on the crystal perfection of single-crystalline CMSX-4 turbine blades
16:00 #We197 Poster Thierry Duffar Study of the zig-zag grain boundary in multicrystalline silicon
16:00 #We198 Poster Thierry Duffar Comparison of various methods for large scale dislocation density characterization
16:00 #We199 Poster Konstantin A. Kokh Real defect structure of GaSe grown by Bridgman method
16:00 #We200 Poster Konstantin A. Kokh Scattering centers in as grown AgGaS2 crystal
16:00 #We201 Poster Jacek Krawczyk The role of voids in cracking of single crystal-matrix composites containing quasicrystal phase
16:00 #We202 Poster Andrey Lebedev Polytypism in SiC: theory and experiments
16:00 #We203 Poster Pavel A. Lykov Investigations of chemical and phase composition of SBN solid solutions: charge and crystals grown by shaping techniques
16:00 #We204 Poster Andrei Vorob'ev Computational analysis of precipitates, parasitic deposits and gas-to-particle conversion during Cz and DS Si-crystal growth
16:00 #We205 Poster Fengrui Wang Effects of 355nm subdamage laser fluence on characteristic of KDP
16:00 #We206 Poster Motoi Yamashita Defect population in the High pressure rotator phase of n-tridecane, pentadecane and heptadecane observed by FT-IR
17:30 Break

August 15th, Thursday

10:20 ThO1 - Thierry Duffar (France) - G07: Defect formation/elimination - Room D, Auditorium Maximum
10:20 00:30:00 Invited oral Maria Tsoutsouva Imaging defects during growth of seeded directionally solidified mono-like silicon for photovoltaic applications
10:50 00:30:00 Invited oral Jacques Rabier  Nucleation and dislocations cores in semi conductors:  from macrostructures to nanostructures
11:20 00:15:00 Oral Shunta Harada Evolution of threading screw dislocation conversion during solution growth of 4H-SiC
11:35 00:15:00 Oral Yadong Xu Coupling effects of Te inclusions and the surrounding extended defects in bulk-grown CdZnTe crystals
11:50 00:15:00 Oral Robert Albrecht The subgrain boundaries in CMSX-4 superalloy 
12:05 00:15:00 Oral Peter Rudolph Self-organized substructuring during bulk crystal growth
12:20 Lunch (EMCG meeting)
14:00 ThO2 - Peter Rudolph (Germany) - G07: Defect formation/elimination - Room D, Auditorium Maximum
14:00 00:30:00 Invited oral Kevin L. Schulte Thick metamorphic buffer layers grown by hydride vapor phase epitaxy as platforms for novel semiconductor devices
14:30 00:15:00 Oral Noriyuki Kuwano Behavior of defects in a-plane GaN films grown by Low-Angle-Incidence Microchannel Epitaxy (LAIMCE)
14:45 00:15:00 Oral Toshinori Taishi Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals
15:00 00:15:00 Oral Junya Osada Characteristic Void Alignment in Sapphire Crystals Grown by the Vertical Bridgman Method
15:15 00:15:00 Oral Alexey Okunev Investigation of Defects in ZnGeP2 Single Crystals by X-ray Topography on Base of Borrmann Effect
16:00 Coffee
16:30 ThO3 - Andreas Danilewsky (Germany) - G07: Defect formation/elimination - Room D, Auditorium Maximum
16:30 00:30:00 Invited oral Yasufumi Fujiwara Development of properties and functionalities by precise control of rare earth doping to semiconductors
17:00 00:15:00 Oral Kumar Janakiraman Influence of acceptor and donor dopants on PZN-PT single crystals
17:15 00:15:00 Oral Nengneng Luo Structure, Domain Configuration and Frequency Dependent Dielectric Properties of PMN-PFN-PT Single Crystal
17:30 00:15:00 Oral Chihiro Koyama Site structures and antisite defects of impurity-doped lithium niobate
17:45 00:15:00 Oral Hengyu Zhao Study on Site Occupancy of Metal Vacancy in Langasite-type Crystal with Four Elements
18:00 00:15:00 Oral Haitao Zhou Study on defects in hydrothermal-grown RbBe2BO3F2 crystals
18:30 Break
© 1998-2024 pielaszek research, all rights reserved Powered by the Conference Engine