The objective of this work is to validate experimentally this theoretical expectation. In this purpose, appropriate zones in Si ingots were selected, cut and polished at places showing zig-zag GB.  These samples were analyzed by EBSD with a SEM in order to find the crystallographic orientation of the two grains forming the GB. The orientation of the [111] planes in both grains are compared and the possibility that one of them is perpendicular or parallel to the S/L interface is discussed. It appears that the experimental observations are in agreement with the model.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/29554 must be provided.

1. Dewetting as a powerful tool for thermoelectricity device applications
2. Comparison of various methods for large scale dislocation density characterization
3. Experimental study of the grain boundary orientations in multi-crystalline silicon
4. Chemical segregation in micro-pulling-down process: analytical model and experiments