Search for content and authors |
Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals |
Toshinori Taishi 1, Takumi Kobayashi 2, Minami Shinozuka 2, Etuko Ohba 2, Chihiro Miyagawa 1,2, Keigo Hoshikawa 1 |
1. Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan |
Abstract |
With regard to microscale defects in sapphire crystals, many research studies reporting small bubbles of the size of 2 - 10 μm in EFG- [1] or CZ-grown crystals [2] have been published. However, there have been few reports about inclusions in sapphire crystals. Danko et al. reported hexagonal-shaped Al3O4 inclusions in sapphire crystals grown by the horizontally oriented crystallization method [3]. Recently, we reported the vertical Bridgman (VB) technique for growing c-axis sapphire crystal using a tungsten (W) or a molybdenum (Mo) crucible [4]. This paper reports the morphology and formation mechanism of inclusions observed in VB-grown sapphire crystals. |
Auxiliary resources (full texts, presentations, posters, etc.) |
|
Legal notice |
|
Related papers |
Presentation: Oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 7, by Toshinori TaishiSee On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17 Submitted: 2013-03-28 11:00 Revised: 2013-03-28 11:09 |