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Influence of acceptor and donor dopants on PZN-PT single crystals

Srimathy Balasubramanian ,  Sharon Gloria ,  Jayavel Ramasamy ,  Kumar Janakiraman 

Crystal Growth Centre, Anna University, Chennai, Chennai 600025, India

Abstract
Single crystals of lead zinc niobium titanium oxide (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3        (PZN-PT) grown at their morphotrophic phase boundary (MPB) composition (x = 9 mol%) are widely used in multilayer capacitors, micro-electro mechanical systems (MEMS) and integrated devices owing to high values of piezoelectric coefficient (d33) and electromechanical coupling factor (k33). However, an urge to increase the d33 and quality factor (Qm) of the material lead to adding dopants in PZN-PT to tune their properties. Hence PZN-9%PT single crystals were grown by doping 0.5 mol% Nd, 0.5 mol% W and 0.5 mol% Cr by high temperature solution growth (flux technique). For the growth of doped crystals, the soaking temperature and time was increased in order to achieve good solubility and homogeneity. Addition of donor dopants (Nd and W) lowered the growth rate which was inferred from the reduced size of the crystals whereas acceptor doping (Cr) doesn’t have much influence on the crystal size. Also a notable colour change was seen after doping with Nd and W (brownish yellow) and with Cr (dark brown). Figure 1 shows the pictures of as grown crystals of (a) Nd-doped, (b) W-doped and (c) Cr-doped PZN-PT crystals respectively. Perovskite phases of the crystals were confirmed by X-ray diffraction. Influence of defects (oxygen vacancies) created during growth process because of Pb evaporation as well as due to doping on the dielectric, ferroelectric and piezoelectric properties of the crystals were investigated in detail and the results will be presented. 

Fig. 1 As grown (a) Nd-doped PZN-PT  (b) W-doped PZN-PT (c) Cr-doped PZN-PT

 

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Presentation: Oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 7, by Kumar Janakiraman
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-09 12:11
Revised:   2013-07-17 12:12