III-V nitride semiconductors are attracted much research attention for their applications in electrical and opto-electronic field. Gallium nitride (GaN) and Indium nitride (InN) are direct bandgap materials of optical bandgap 3.4 eV and 0.7 eV respectively.  Many growth procedures have been adapted in growing the III- nitrides.  Usually the preparation of GaN in these methods involves nitrification at higher temperatures. Synthesis of nanocrystalline GaN and InN has been done via modified sol-gel and ammonolysis methods. Both nitrides are prepared in successive steps: (i) preparing their elemental –citrate-amine crystals with optimization of pH (7 -8 for GaN, 2 -3 for InN) and (ii) followed with drying in air at 400 °C and (iii) subjected to ammonolysis at elevated temperatures. Experiments of nitridation process have been carried out with variation of temperature in a horizontal reactor with constant flow of ammonia (400 mlm). In the case of InN, the period of nitration process is found to have an important role in the formation of this nitride.  Structural studies of  X-ray diffraction and Raman showed the successful synthesis of hexagonal GaN and InN. The optical properties of the synthesized nitrides have been investigated using diffusive reflectance spectra and room temperature photoluminescence studies. Different morphological shapes of these agglomerated nitrides are observed in the scanning electron microscopic images. The morphology and bandgap of the nitrides varied with the synthesis temperature.  Barium doped InN nanocrystals have also been successfully grown. Ba doping is found to eliminate the presence of indium.  The structural, morphological and optical properties of the Ba doped InN have been investigated and will be presented in detail.

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