Time
|
Duration
|
Type
|
Presenting person
|
Title
|
August 14th, Wednesday |
|
16:00 |
WeP-T04 - Room 107, Old Library |
16:00 |
#We67 |
Poster |
Igor C. Avetissov |
Nonstoichiometry and optical properties of ZnSe crystal grown from melt and vapor |
16:00 |
#We68 |
Poster |
Igor C. Avetissov |
VGF Growth of CdTe Crystal Assisted by Axial Vibration Control Technique Under Controlled Cadmium Pressure |
16:00 |
#We69 |
Poster |
Svetlana V. Bykova |
Investigation of morphological stability of melt/crystal interface at CZT crystal growth by the AHP method under high pressure |
16:00 |
#We70 |
Poster |
Jeffrey J. Derby |
A Comprehensive Model of the Growth of Cadmium Zinc Telluride (CZT) by the Traveling Heater Method (THM) |
16:00 |
#We71 |
Poster |
Jeffrey J. Derby |
Modeling the Migration of Tellurium-Rich, Second-Phase Particles in Cadmium Zinc Telluride (CZT) via Temperature Gradient Zone Melting (TGZM) |
16:00 |
#We72 |
Poster |
Manisha D. Deshpande |
Optical characterization of dilute nitride of InSb bulk crystals grown by vertical directional solidification technique |
16:00 |
#We73 |
Poster |
Yuri Ivanov |
The effect of charge composition on the microstructure of CdZnTe single crystals grown by sefl-seeding |
16:00 |
#We74 |
Poster |
Izabela J. Jendrzejewska |
Growth, structure and magnetic properties of ZnCr2Se4 – single crystals doped by dysprosium. |
16:00 |
#We75 |
Poster |
Konstantin A. Kokh |
Microstructural and vibrational properties of PVT grown Sb2Te3 crystals |
16:00 |
#We76 |
Poster |
Huanyong Li |
The growth habit, morphologies and vapor free-growth mechanism of ZnSe crystal directely grown from zinc and selenium |
16:00 |
#We77 |
Poster |
Dilip S. Maske |
Seebeck Coefficient and Electrical Properties of InSbBi Bulk Crystal Grown by Vertical Directional Solidification |
16:00 |
#We78 |
Poster |
Hwa Sub Oh |
Study of p-doping profile for high-brightness AlGaInP-based light emitting diodes |
16:00 |
#We79 |
Poster |
Natalia I. Podolska |
Structural and Thermodynamic Properties of III-V and II-VI Ternary Semiconductor Compounds |
16:00 |
#We80 |
Poster |
Alexander M. Samoylov |
The Determination of Different Types of Conductivity Areas within Homogeneity Region of Ga Solid Solutions in PbTe films on Si-substrates |
16:00 |
#We81 |
Poster |
Niefeng Sun |
The Impact of Melt Temperature on Rapid in-situ Synthesis of InP |
16:00 |
#We82 |
Poster |
Beijun Zhao |
Lattice dynamics of CdGeAs2 crystal by Raman spectroscopy |
17:30 |
Break |
August 16th, Friday |
|
08:30 |
FrO1 - Jochen Friedrich (Germany) - T04: Compound semiconductors - Room C, Auditorium Maximum |
08:30 |
00:30:00 |
Invited oral |
Aleksandar G. Ostrogorsky |
Czochralski Growth of Indium Iodide |
09:00 |
00:15:00 |
Oral |
Igor C. Avetissov |
Nonstoichiometry of ZnTe and CdTe vapor grown crystals |
09:15 |
00:15:00 |
Oral |
Rajendra Prasad Pathak |
Growth and Surface Studies of MoXW1-xSe2 Crystals |
09:30 |
00:15:00 |
Oral |
Rudolf Lauck |
CVT of Chalcopyrite Semiconductors |
09:45 |
00:15:00 |
Oral |
Tomasz Jakubczyk |
Growth of ZnTe - based microcavities on GaSb substrates |
10:00 |
00:15:00 |
Oral |
Perumal Kannappan |
Comparative studies on structural, compositional, morphological and optical properties of ZnSe and ZnSSe single crystals grown by CVT method |
10:15 |
00:15:00 |
Oral |
Tao Wang |
Te solution growth of twin-free CdMnTe crystal for detector applications |
10:30 |
Coffee |
11:00 |
FrO2 - Arne Cröll (Germany) - T04: Compound semiconductors - Room C, Auditorium Maximum |
11:00 |
00:30:00 |
Invited oral |
Christiane Frank-Rotsch |
Vertical gradient freeze growth of GaAs using a heater magnet module (HMM) |
11:30 |
00:15:00 |
Oral |
Andrey Smirnov |
Modeling of Dislocation Dynamics and Facet Formation in VGF of GaAs |
11:45 |
00:15:00 |
Oral |
Niefeng Sun |
Some Optical Thermal and Electrical Properties of Bulk InP Crystal |
12:00 |
00:15:00 |
Oral |
Sun-Wook Kim |
Defect and Strain Analysis of Selective GaAs Epitaxy in STI Patterned Si (001) Substrate |
12:15 |
00:15:00 |
Oral |
Kentaroh Watanabe |
Strain Effect for Different Phosphorus Content of InGaAs/GaAsP Super-Lattice in GaAs p-i-n Single Junction Solar Cell. |
13:00 |
Closing ceremony |