GaAs wafers are used for production of high-frequency microelectronics, multijunction solar cells, LED devices and in other applications. Requirements for wafer quality and price motivate crystal manufacturers for optimization of crystal growth technology to increase furnace productivity, wafer yield, and improve crystal quality. Since it is difficult to get accurate information about the crystal growth conditions experimentally, computer modeling is being applied in industry for analysis and optimization of crystal growth processes. Specialized modeling capabilities of the software are important for quick and efficient technology optimization.
In the present work, we perform comprehensive analysis of 6-inch VGF GaAs crystal growth process using a specialized software for modeling of crystal growth, CGSim. Within this work, we performed unsteady modeling of GaAs growth process [1] coupled with melt and encapsulant flow, and melt/crystal interface shape evolution. Computation of the melt/crystal interface including facet formation [2] has been performed taking into account crystal orientation and local melt supercooling along the melt/crystal interface, which allowed us to estimate the probability of single crystal structure loss. Thermal stress evolution in the crystal during the growth process and cooling, and thermal stress release into dislocations within Haasen-Alexander-Sumino model [3, 4] have been calculated simultaneously with crystallization dynamics. As a potential direction of process optimization, different hot zone designs and configurations of traveling magnetic fields have been applied. The effect of TMF and furnace design on the melt flow pattern, interface shape and crystal quality is presented and discussed.
[1] K. Koai, K. Sonnenberg, H. Wenzl, J. of Crystal Growth 137 (1994) 59 – 63
[2] O. Weinstein, W. Miller, J. of Crystal Growth 312 (2010) 989–996
[3] H. Alexander, P. Haasen, Solid State Phys. 22, 27 (1968)
[4] M. Suezawa, K. Sumino, I. Yonegaga, J. Appl. Phys. 51, 217 (1979)

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