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Modeling of Dislocation Dynamics and Facet Formation in VGF of GaAs
|Vasif Mamedov , Vladimir Artemyev , Andrey Smirnov , Vladimir Kalaev
STR Group, Inc., Engels av. 27, P.O. Box 89, St-Petersburg 194156, Russian Federation
GaAs wafers are used for production of high-frequency microelectronics, multijunction solar cells, LED devices and in other applications. Requirements for wafer quality and price motivate crystal manufacturers for optimization of crystal growth technology to increase furnace productivity, wafer yield, and improve crystal quality. Since it is difficult to get accurate information about the crystal growth conditions experimentally, computer modeling is being applied in industry for analysis and optimization of crystal growth processes. Specialized modeling capabilities of the software are important for quick and efficient technology optimization.
Presentation: Oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 4, by Andrey Smirnov
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-04-15 02:46 Revised: 2013-04-15 02:46