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dr Alexander M. Samoylov
e-mail:
***@chem.vsu.ru
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phone:
+7-4732-596515
fax:
+7-4732-208445
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interest(s):
Affiliation:
Voronezh State University
address:
Universitetskaya Sq., 1, Voronezh, 394006,
Russian Federation
phone:
fax:
web:
Participant:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
began:
2013-08-11
ended:
2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
The Improved Procedure of Ga-doped PbTe Films One Stage Synthesis by Modified HWE Technique
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Surface morphology and structure of CaF
2
/BaF
2
–on-Si epitaxial layers and the electronic properties of the interface with the substrate
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Heterostructures PbTe:Ga/BaF
2
/CaF
2
/Si for IR photodetectors
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
The Determination of Different Types of Conductivity Areas within Homogeneity Region of Ga Solid Solutions in PbTe films on Si-substrates
Publications:
electrical properties of lead telluride single crystals doped with bromine
Heterostructures PbTe:Ga/BaF
2
/CaF
2
/Si for IR photodetectors
Surface morphology and structure of CaF
2
/BaF
2
–on-Si epitaxial layers and the electronic properties of the interface with the substrate
The charge states of In impurity atoms in PbTe<In>/Si films prepared by modified HWE technique
The Determination of Different Types of Conductivity Areas within Homogeneity Region of Ga Solid Solutions in PbTe films on Si-substrates
The determination of solubility limit of indium impurity in PbTe<In> thin films on Si substrates
The function of thiourea coordination compounds composition in synthesis of CdS thin films
The Improved Procedure of Ga-doped PbTe Films One Stage Synthesis by Modified HWE Technique
The polymorphic modifications of CdS prepared from coordination compounds of thiourea
The determination of solubility limits of gallium impurity in PbTe films doped with Ga on Si substrates
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