Under unfluence of the presence of III A group metals the electrical parameters of PbTe and its solid solutions can change significantly. However, some fundamental problems of the formation, saturation, and influence of quasi-local impurity levels in In-doped PbTe have not been resolved yet.

The main purposes of this study are to discuss the experimental results, which have been received during the examination of the chemical quantitative composition and the real crystal structure of PbTe<In>/Si and PbTe<In>/SiO₂/Si heterostructures, and to evaluate the solubility of In atoms in lead telluride thin films at different temperatures.

In this work the method of fabrication of PbTe<In> heterostructures offers the direct HWE one-stage synthesis, in which the doping and the condensation process proceeds simultaneously. On the basis of SEM observation, XRD, and EPMA experimental results the boundary of indium's limited solubility region in lead telluride matrix has been drawn. From the point of view of Gibb's compositional triangle of Pb - In - Te ternary system, one can make a conclusion that the analysis of the PbTe - InTe pseudobinary cross section only, as it have been done earlier, does not explain, in general, the phenomena of indium's solubility in PbTe crystal structure. For fundamental understanding of the formation of In solid solutions it is necessary to considerthe PbTe - In₄Te₃ and PbTe - In₂Te₃ polythermal cross-sections also.

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2. Surface morphology and structure of CaF₂/BaF₂–on-Si epitaxial layers and the electronic properties of the interface with the substrate
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6. electrical properties of lead telluride single crystals doped with bromine
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