The synthesis of metal sulphide thin films from aqueous solutions of its coordination compounds with a thiourea (thio) has some advantages. First of all, this technique allows controlling the functional properties of metal sulphides thin films by designing of coordination compounds with the different structure and composition. The technique of thermal destruction of thiourea coordination compounds by sputtering of aqueous solutions on the hot substrates has been employed in this work. The main purpose of this study is to discuss the experimental results, which have been received during the examination of the optical properties and the real crystal structure of CdS thin films. CdS films were fabricated from aqueous solutions of [Cd(thio)4-nXn](2-n)+ (where n = 0, 1, 2; X – Cl-, Br-, I-, and СH3COO-). The presence of halogen and oxygen atoms results in a capability of CdS films doping by impurities in anion sublattice. It has been established that for CdS thin films prepared from aqueous solutions of neutral thiourea complexes with halogen anions the intensity of a photoluminescenceсe increases approximately in 40 - 100 times. Besides, the optical band gap decreases in CdS (Hal – Cl, Br, I) layers. In CdS films the shift of the optical absorption edge demonstrates that energy spectrum changes have intensified with increasing of atomic weight of halogen impurity atoms. At the same time the electrically inactive isovalent substituents OS are delivered in CdS films by the thermal destruction of [Cd(thio)4-nXn](2-n)+ with acetate ligands. The mechanism of photoluminescenceсe stimulation under influence of halogen impurities is discuussed in this work.

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