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Nonstoichiometry of ZnTe and CdTe vapor grown crystals

Igor C. Avetissov 1Elena Mozhevitina 1Andrew Khomykov 1Roman I. Avetisov 1Albert A. Davydov 2Vladimir P. Chegnov 2Olga I. Chegnova 2Nikolai V. Zhavoronkov 2

1. D.I.Mendeleyev University of Chemical Technology of Russia (MUCTR), Miusskaya sq. 9, Moscow 125047, Russian Federation
2. Research Institute of Material Science and Technology (NIIMV), Проезд 4806, д.4, стр.2, Zelenograd Moscow 124460, Russian Federation


Extra pure ZnTe and CdTe single crystals were grown by Markov-Davydov vapor growth method [1] on a sapphire substrate. Crystals were formed at 1150-1350 K temperature range at pressures close to congruent sublimation conditions (Fig.1).

Fig.1. The scheme of CdTe and ZnTe vapor crystal growth by Markov-Davydov technique. Setup scheme (right) 1- thermo insulating cover, 2- ceramic tube, 3- thermoinsulation, 4- quartz glass reactor, 5- polycrystalline ingot, 6- quartz glass crucible, 7- growing crystal, 8- seed, 9- sapphire piedestal, 10- quartz glass tube, 11-  plung for vacuume system connection.   PTe2-T projection of Cd-Te (left). Figures on isoconcentration lines shows the excess Te ("-" Cd) concentration at bivariant Ss-CdTeV equilibrium. The white area covers the range of stable single crystal growth conditions.

The study of ZnTe and CdTe homogeneity ranges by direct physico-chemical method [2] in the temperature range 750-1365 K added by XRD analysis let us proposed the scheme of 3C-2H polymorphous transition in ZnTe and CdTe compounds. We proposed that polymorphous transition is followed by peritectic reactions at both Te-riched and Zn(Cd)-riched sides (Fig.2,3).


Fig.2. Homogenity region of ZnTe with the proposed scheme of 3C-2H polymorphous transformation

For the first time it was demonstrated that homogeneity region of undoped ZnTe included stiochiometric composition.

Analysis of luminescent and electrical properties of the as-growm and heat treated at different partial pressures single crystals was conducted.


Fig.3. Homogenitty region of CdTe with the proposed scheme of 3C-2H polymorphous transformation

The research was supported by Ministry of Education and Science of Russia by grant N 16.513.11.3144

1. A.A.Davydov, (1992) Neorg. Mater. (in Russian), 28, 42
2. I.Ch.Avetisov (2008) Izvestia VUZov ser. Materialy Electronnoi Techniki (in Russian), 3, 68-75


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Presentation: Oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 4, by Igor C. Avetissov
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-03-10 21:04
Revised:   2013-03-22 22:16