Extra pure ZnTe and CdTe single crystals were grown by Markov-Davydov vapor growth method [1] on a sapphire substrate. Crystals were formed at 1150-1350 K temperature range at pressures close to congruent sublimation conditions (Fig.1).

Fig.1. The scheme of CdTe and ZnTe vapor crystal growth by Markov-Davydov technique. Setup scheme (right) 1- thermo insulating cover, 2- ceramic tube, 3- thermoinsulation, 4- quartz glass reactor, 5- polycrystalline ingot, 6- quartz glass crucible, 7- growing crystal, 8- seed, 9- sapphire piedestal, 10- quartz glass tube, 11-  plung for vacuume system connection.   P_Te2-T projection of Cd-Te (left). Figures on isoconcentration lines shows the excess Te ("-" Cd) concentration at bivariant S_s-CdTeV equilibrium. The white area covers the range of stable single crystal growth conditions.

The study of ZnTe and CdTe homogeneity ranges by direct physico-chemical method [2] in the temperature range 750-1365 K added by XRD analysis let us proposed the scheme of 3C-2H polymorphous transition in ZnTe and CdTe compounds. We proposed that polymorphous transition is followed by peritectic reactions at both Te-riched and Zn(Cd)-riched sides (Fig.2,3).

Fig.2. Homogenity region of ZnTe with the proposed scheme of 3C-2H polymorphous transformation

For the first time it was demonstrated that homogeneity region of undoped ZnTe included stiochiometric composition.

Analysis of luminescent and electrical properties of the as-growm and heat treated at different partial pressures single crystals was conducted.

Fig.3. Homogenitty region of CdTe with the proposed scheme of 3C-2H polymorphous transformation

The research was supported by Ministry of Education and Science of Russia by grant N 16.513.11.3144

1. A.A.Davydov, et.al. (1992) Neorg. Mater. (in Russian), 28, 42
2. I.Ch.Avetisov (2008) Izvestia VUZov ser. Materialy Electronnoi Techniki (in Russian), 3, 68-75

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