SiC crystals are widely used in electronic devices due to their unique properties [1]. Nowadays there is a lot of types of SiC wafers with different polytypes on the market.

In the present research we study the influence of impurity concentration on SiC polytype formation at different growth parameters and source materials. A special procedure of full dissolving of SiC crystals was developed. The solution was analyzed by ICP-MS technique (NexION 300D, Perkin Elmer) with the limits 10^-10-10^-11 g/g, which provided the detection of impurities in crystals 10¹²-10¹¹ cm^-3.  To detect O, N, F, Cl, Br in bulk crystal with the limits 10¹⁴-10¹⁵ cm^-3 we used SIMS technique (MiniSIMS, MillBrook). 

SiC polytypes were detected by Raman spectroscopy technique.

The research was supported by Ministry of Education and Science of Russia, Contract no. 16.552.11.7046

1. https://www.ecscrm-2012.org

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