Bulk crystal of InSb_1-xBi_x semiconductor for x = 0.02 was grown by vertical directional solidification (VDS) Technique without seed. The source materials indium (In), antimony (Sb) and bismuth (Bi) with 6N purity were mixed in stoichiometric proportion and filled in a specially designed quartz ampoule (I.D. 12 mm). The filled ampoule was flushed ten times by argon gas to reduce contamination due to air and then it was sealed at the argon pressure 200 torr.  For homogeneous melt, the mixture in the ampoule was synthesized for 11hr at temperature 800⁰C and the ampoule rotation speed was 25 rpm. Growth of the crystal was carried out at the growth rate of 3mm/hr. The temperature gradient at the solid-melt interface was of the order of 18 ⁰C/cm. The temperature of the as grown ingot was reduced slowly from 440⁰C to 300⁰C in 12 hr. It was detached growth, confirmed by the O.D. of the ingot and I. D. of the ampoule.  The composition of the source materials (In, Sb and Bi) in the grown crystals was measured by EDAX analysis.  The wafers of the grown ingot were obtained by cutting the ingot perpendicular to the growth axis. Hall measurements had indicated that the grown ingot was n-type semiconductor with mobility 14000 cm²/Vs. Measurement of Seebeck coefficient on the wafer in the temperature range of 32^oC to 80^oC, showed linear increase in the Seebeck voltage with the Seebeck coefficient 75.8 µVK^-1. The details results will be presented in the paper.

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