Modeling of detachment of the bulk crystal growth and its mechanism to achieve it on terrestrial laboratory is recommended. Experimental evidence of the repeatable detached growth of entire crystal and perfection in physical properties is yet mystery! 

Since 1993, the goal of research was to determine the influence of favorable operating conditions to achieve detached solidification. The vertical directional solidification (VDS) technique has shown experimental evidences as bulk crystal growth process for the entire detached growth of InSb/GaSb ingot grown- without seed, without wall contact, without coating and without external pressure in our laboratory. A furnace was constructed with the temperature increasing with height for the transport of dissolved gases into the gap. The ends of the ampoule were sealed and it was added factors favoring detachment with a high Young’s contact angle and a low gas-melt surface tension. The detached growth and apparition of the gap perform spontaneous tricks to the entire ingots by the self detached growth and self pressure difference. The sufficient growth parameters and conditions necessary such as ampoule cone geometry, filled argon pressure, self stabilization pressure difference across the meniscus, concave interface shape of the melt,  Young’s thermal contact angle, thin oxide layer, capillarity effect, thermal field, thermocapillary effect. In VDS, 80% ingots slide out easily, 15% ingots entrapped in conical region, and 5% ingots attached to wall of ampoule. Three types of detached growth are investigated, gap constant, gap increases, and gap decreases. Experimental statistical analysis showed that it is repeatable and reproducible growth. Unfortunately, none of the models cited concur with the correlation to VDS published experimental results.

On the basis of our experimental analysis and qualitative knowledge, detached growth is predicted in VDS and it shows significant enhancement into the crystalline quality. The meniscus conversion from concave to convex and concave crystal-melt interface shape is predicted from the strong evidence of the analysis of experimental results. It is predicted that plane or slightly concave meniscus shapes and concave interface shape are shown largest crystalline quality, and it is highest for the crystal grown ever. Statistics of experimental measurement for the detached growth, its mystery of the four decades reveal in VDS grown ingots. Physics behind detached growth is discussed on the basis of “A steady and stable meniscus and interface model. Its qualitative physical model is proposed on the basis of the experimental statistics as “A new crystal growth process”.

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1. Seebeck Coefficient and Electrical Properties of InSbBi Bulk Crystal Grown by Vertical Directional Solidification 
2. Optical characterization of dilute nitride of InSb bulk crystals grown by vertical directional solidification technique