The band gap of Indium antimonide could be substantially reduced by the doping of highly electronegative Nitrogen. Theoretically, it was expected that one percent of nitrogen should reduce the band gap by 100mev. This reduction in the band gap will make the material suitable for the far infrared detection . A lot of work is done on thin films of dilute nitrides of InSb by various researchers. in our laboratory, three bulk crystals of InSbN are grown by vertical directional solidification (VDS) technique. Through VDS technique, high quality binary compounds such as InSb and GaSb are successfully grown. For the growth of InSbN, the source materials Indium, Antimony and Indium nitride are sealed in an ampoule with tapered end on one side. The growth is carried out at 3mm/hour at reduced pressure of argon. The VDS method is advantageous for dilute nitride bulk crystals since it reduces the need for continuous  flow of nitrogen or presence of nitrogen plasma. The resultant ingots were found detached from the ampoule wall. This was expected since the prior growths of InSb and GaSb bulk crystals were also found detached from the ampoule wall, resulting in high quality crystal. The physical properties were studied. The smooth appearance of the crystal, uniform diameter across the length and other studies confirm the crystal quality. EPMA was carried out for compositional analysis. The analysis confirmed the successful incorporation of nitrogen in the compound. Each ingot is about 35 mm in length and 12 mm diameter. The graph of absorption versus energy was plotted to study shift in the energy band gap with the help of FTIR. The deviation in the shift to smaller wavelength was attributed to high carrier concentration. The corresponding Moss-Burstein shift in the energy gap was calculated. The calculated values of the energy band gap due to all effects is summed up and compared with the observed values. Also the material is analyzed using Raman spectroscopy. The analysis shows change in intensity in Raman shift from LO to TO with increase in nitrogen content. The physical properties of InSbN are reported in detail.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/28966 must be provided.

1. Seebeck Coefficient and Electrical Properties of InSbBi Bulk Crystal Grown by Vertical Directional Solidification 
2. Detached Growth:  Unfolding the four decades growth mystery in vertical directional solidification technique on Earth