Synthesis is the previous step of InP crystal growth and of vital importance to the quality of productions. 5kg of high-quality and stoichiometric InP is being rapidly synthesized and continuously grown in an improved Liquid Encapsulated Czochralski(LEC) system under an argon pressure in the range of 35 to 45 atmospheres. In this system, polycrystalline InP is produced by two double-tube injectors with in-situ injection synthesis method within 2.5 hours, the first injector loads about 550-600g red phosphorus and it takes 50-65 minutes for the phosphorus to react completely, while the second injectors loads about 500-600g red phosphorus and it takes 65-80 minutes, both of the injectors are heated by their own heater in the process of synthesis. After a series of experiments, we find out that when the melt temperature is between 1110℃ and 1090℃ while using the first phophorus injector, and 1090-1070℃ while using the second phosphorus injector, stoichiometric polycrystalline InP can be achieved repeatedly, the melt temperature is slowly reduced by a programme in the synthesis process. By the way, it is very difficult to measure the melt temperature accurately in such a high-pressure system by a thermocouple which is mostly used, heat radiation pyrometer is not applicable also because of the boric oxide encapsulant, while we find a convenient and effective method by counting the increase rate of a thermocouple’s show value which is close to the crucible to define the melt temperature, the deviation is not more than 10℃ from the truth, that is competent. The impact of melt temperature on rapid synthesis of InP is a combined action result of chemical reaction rate and chemical equilibrium, rising melt temperature can increase the rate of synthesis reaction, that is benefit on achieve rapid synthesis, and reduce the lost of red phosphorus which is not able to fully react with indium, but as the synthesis of InP is an exothermic and reversible reaction, exorbitant temperature could make the decomposition reaction too strong, and phosphorus will massively volatilize from the melt which would make phosphorus insufficient. In summary, suitable melt temperature is very important to synthesize InP, and adjusting the melt temperature based on the concentration of indium and InP in the melt is one of the key technologies to achieve rapid, stoichiometric and repeatable synthesis of InP.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/29619 must be provided.

1. Some Optical Thermal and Electrical Properties of Bulk InP Crystal