Time
|
Duration
|
Type
|
Presenting person
|
Title
|
August 14th, Wednesday |
|
| 14:00 |
00:30:00 |
Invited oral |
Balaji Raghothamachar |
Synchrotron Topography Studies of the Operation of Double-Ended Frank-Read Partial Dislocation Sources in 4H-SiC |
| 14:30 |
00:15:00 |
Oral |
Eva-Regine Carl |
Grain and Subgrain Boundaries in Multi-Crystalline Silicon |
| 14:45 |
00:15:00 |
Oral |
Thierry Duffar |
Experimental study of the grain boundary orientations in multi-crystalline silicon |
| 15:00 |
00:15:00 |
Oral |
Vasif Mamedov |
Numerical study of dislocation formation during transient growth of multi-Si by the direct solidification technique |
| 15:15 |
00:15:00 |
Oral |
Bing Gao |
Quantitative analysis of correlations between the generation of dislocations and its influencing factors during cylindrical monocrystalline silicon growth |
| 15:30 |
00:15:00 |
Oral |
Moez Jomâa |
Numerical Analysis of the Effect of Growth Rate Variations on Defect Formation in Czochralski Grown Silicon |
| 15:45 |
00:15:00 |
Oral |
Takao Abe |
Discrepancies between experimental results and simulations on point defects behavior during silicon crystal growth from the melt |
August 15th, Thursday |
|
| 10:20 |
00:30:00 |
Invited oral |
Maria Tsoutsouva |
Imaging defects during growth of seeded directionally solidified mono-like silicon for photovoltaic applications |
| 10:50 |
00:30:00 |
Invited oral |
Jacques Rabier |
Nucleation and dislocations cores in semi conductors: from macrostructures to nanostructures |
| 11:20 |
00:15:00 |
Oral |
Shunta Harada |
Evolution of threading screw dislocation conversion during solution growth of 4H-SiC |
| 11:35 |
00:15:00 |
Oral |
Yadong Xu |
Coupling effects of Te inclusions and the surrounding extended defects in bulk-grown CdZnTe crystals |
| 11:50 |
00:15:00 |
Oral |
Robert Albrecht |
The subgrain boundaries in CMSX-4 superalloy |
| 12:05 |
00:15:00 |
Oral |
Peter Rudolph |
Self-organized substructuring during bulk crystal growth |
| 14:00 |
00:30:00 |
Invited oral |
Kevin L. Schulte |
Thick metamorphic buffer layers grown by hydride vapor phase epitaxy as platforms for novel semiconductor devices |
| 14:30 |
00:15:00 |
Oral |
Noriyuki Kuwano |
Behavior of defects in a-plane GaN films grown by Low-Angle-Incidence Microchannel Epitaxy (LAIMCE) |
| 14:45 |
00:15:00 |
Oral |
Toshinori Taishi |
Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals |
| 15:00 |
00:15:00 |
Oral |
Junya Osada |
Characteristic Void Alignment in Sapphire Crystals Grown by the Vertical Bridgman Method |
| 15:15 |
00:15:00 |
Oral |
Alexey Okunev |
Investigation of Defects in ZnGeP2 Single Crystals by X-ray Topography on Base of Borrmann Effect |
| 16:30 |
00:30:00 |
Invited oral |
Yasufumi Fujiwara |
Development of properties and functionalities by precise control of rare earth doping to semiconductors |
| 17:00 |
00:15:00 |
Oral |
Kumar Janakiraman |
Influence of acceptor and donor dopants on PZN-PT single crystals |
| 17:15 |
00:15:00 |
Oral |
Nengneng Luo |
Structure, Domain Configuration and Frequency Dependent Dielectric Properties of PMN-PFN-PT Single Crystal |
| 17:30 |
00:15:00 |
Oral |
Chihiro Koyama |
Site structures and antisite defects of impurity-doped lithium niobate |
| 17:45 |
00:15:00 |
Oral |
Hengyu Zhao |
Study on Site Occupancy of Metal Vacancy in Langasite-type Crystal with Four Elements |
| 18:00 |
00:15:00 |
Oral |
Haitao Zhou |
Study on defects in hydrothermal-grown RbBe2BO3F2 crystals |
