17th International Conference on Crystal Growth and Epitaxy

Time	Duration	Type	Presenting person	Title
August 14th, Wednesday
14:00	00:30:00	Invited oral	Balaji Raghothamachar	Synchrotron Topography Studies of the Operation of Double-Ended Frank-Read Partial Dislocation Sources in 4H-SiC
14:30	00:15:00	Oral	Eva-Regine Carl	Grain and Subgrain Boundaries in Multi-Crystalline Silicon
14:45	00:15:00	Oral	Thierry Duffar	Experimental study of the grain boundary orientations in multi-crystalline silicon
15:00	00:15:00	Oral	Vasif Mamedov	Numerical study of dislocation formation during transient growth of multi-Si by the direct solidification technique
15:15	00:15:00	Oral	Bing Gao	Quantitative analysis of correlations between the generation of dislocations and its influencing factors during cylindrical monocrystalline silicon growth
15:30	00:15:00	Oral	Moez Jomâa	Numerical Analysis of the Effect of Growth Rate Variations on Defect Formation in Czochralski Grown Silicon
15:45	00:15:00	Oral	Takao Abe	Discrepancies between experimental results and simulations on point defects behavior during silicon crystal growth from the melt
August 15th, Thursday
10:20	00:30:00	Invited oral	Maria Tsoutsouva	Imaging defects during growth of seeded directionally solidified mono-like silicon for photovoltaic applications
10:50	00:30:00	Invited oral	Jacques Rabier	Nucleation and dislocations cores in semi conductors: from macrostructures to nanostructures
11:20	00:15:00	Oral	Shunta Harada	Evolution of threading screw dislocation conversion during solution growth of 4H-SiC
11:35	00:15:00	Oral	Yadong Xu	Coupling effects of Te inclusions and the surrounding extended defects in bulk-grown CdZnTe crystals
11:50	00:15:00	Oral	Robert Albrecht	The subgrain boundaries in CMSX-4 superalloy
12:05	00:15:00	Oral	Peter Rudolph	Self-organized substructuring during bulk crystal growth
14:00	00:30:00	Invited oral	Kevin L. Schulte	Thick metamorphic buffer layers grown by hydride vapor phase epitaxy as platforms for novel semiconductor devices
14:30	00:15:00	Oral	Noriyuki Kuwano	Behavior of defects in a-plane GaN films grown by Low-Angle-Incidence Microchannel Epitaxy (LAIMCE)
14:45	00:15:00	Oral	Toshinori Taishi	Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals
15:00	00:15:00	Oral	Junya Osada	Characteristic Void Alignment in Sapphire Crystals Grown by the Vertical Bridgman Method
15:15	00:15:00	Oral	Alexey Okunev	Investigation of Defects in ZnGeP₂ Single Crystals by X-ray Topography on Base of Borrmann Effect
16:30	00:30:00	Invited oral	Yasufumi Fujiwara	Development of properties and functionalities by precise control of rare earth doping to semiconductors
17:00	00:15:00	Oral	Kumar Janakiraman	Influence of acceptor and donor dopants on PZN-PT single crystals
17:15	00:15:00	Oral	Nengneng Luo	Structure, Domain Configuration and Frequency Dependent Dielectric Properties of PMN-PFN-PT Single Crystal
17:30	00:15:00	Oral	Chihiro Koyama	Site structures and antisite defects of impurity-doped lithium niobate
17:45	00:15:00	Oral	Hengyu Zhao	Study on Site Occupancy of Metal Vacancy in Langasite-type Crystal with Four Elements
18:00	00:15:00	Oral	Haitao Zhou	Study on defects in hydrothermal-grown RbBe2BO3F2 crystals

17th International Conference on Crystal Growth and Epitaxy...

on-line journal

August 14th, Wednesday

August 15th, Thursday