17th International Conference on Crystal Growth and Epitaxy...

 on-line journal

Presenting person

August 12th, Monday

11:00 MoO1 - Michal Leszczynski (Poland) - G10: Thin film and epitaxial growth - Room C, Auditorium Maximum
11:00 00:30:00 Invited oral Euijoon Yoon Hollow nanostructure-assisted growth of GaN by MOCVD and its applications
11:30 00:15:00 Oral Baskar Krishnan Effect of nucleation islands coalescence on determining the quality of AlN layers grown by MOCVD
11:45 00:15:00 Oral Bojan Mitrovic Effect of process conditions on wafer curvature due to thermal stresses and wafer-to-carrier temperature gradient during MOCVD growth in vertical rotating disc reactors
12:00 00:15:00 Oral Chu-An Li Growth and characterizations of nonpolar InN epitaxial film on LiGaO2 substrate by halide vapor phase epitaxy
12:15 00:15:00 Oral Alexey V. Novikov The epitaxial growth of Ge/Si structures on SiGe/Si(001) strain-relaxed buffers: transition from planar to island growth mode
12:30 00:15:00 Oral Zhanna V. Smagina Growth of ordered Ge nanoislands on Si surface patterned by ion irradiation
12:45 00:15:00 Oral Darrell G. Schlom Synthesis of defect-mitigating tunable dielectric materials by MBE
13:00 Lunch (JCG Editors meeting)
15:00 MoO2 - Alexey V. Novikov (Russia) - G10: Thin film and epitaxial growth - Room C, Auditorium Maximum
15:00 00:30:00 Invited oral Carol Thompson In situ x-ray studies of epitaxial growth by MOVPE
15:30 00:15:00 Oral Sandra Rubio Influence of CdS deposition technique on CdS/CdTe thin films
15:45 00:15:00 Oral Jose Luis Plaza CdS and CdTe films grown by close space vapour sublimation using resistive heaters for solar cell applications: Experimental and numerical analysis
16:00 00:15:00 Oral Hitoshi Habuka Low Temperature Amorphous Silicon Carbide Thin Film Formation Process on Aluminum Surface Using Monomethylsilane Gas and Trichlorosilane Gas
16:15 00:15:00 Oral Gurvan Brasse Liquid phase epitaxy of rare earth doped LiYF4 layers for the elaboration of compact laser planar waveguides
16:30 00:15:00 Oral Wester De Poel Epitaxial growth of molecules and salts on muscovite mica
16:45 00:15:00 Oral Yuriy V. Zorenko Development of novel scintillating screens based on thesingle crystalline films of Ce doped multi-component (Gd,Y,Lu,La)3(Al,Ga,Sc)5O12 garnets by LPE method
17:00 MoP-G10 - Room 205, Old Library
17:00 #Mo112 Poster Bunyod Allabergenov Microstructural analysis and optical characteristics of Cu-doped ZnO thin films prepared by DC magnetron sputtering  
17:00 #Mo113 Poster Štefan Chromik Structural properties of epitaxial La0.66Sr0.33MnO3 films with increased temperature of metal-insulator transition
17:00 #Mo114 Poster Jan Grym Epitaxial growth on porous substrates of III-V semiconductors
17:00 #Mo115 Poster Yujirou Hirota Selective growth of (001) GaAs using patterned graphene mask
17:00 #Mo116 Poster Xiuguang Jin Nano-scale characterization of GaAsP/GaAs strained superlattice structures by nano-beam electron diffraction
17:00 #Mo118 Poster BongKyun Kang Optical properties and crystallinity of the GaN film grown on the SiO2 based nanocomposites by MOCVD
17:00 #Mo119 Poster Byongju Kim Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays
17:00 #Mo120 Poster Aleksandra Wierzbicka Mechanism of in-plane orientation of GaN self-induced nanowires grown on Si(111) substrates 
17:00 #Mo121 Poster Takeshi Kusumori Epitaxial growth of SmFe7 films on Ta-buffered sapphire substrate using the RF magnetron sputtering method
17:00 #Mo122 Poster Aleksandra Lazarenko Structural and optical properties of GaPN(As) and InGaPN layers grown by MBE
17:00 #Mo123 Poster Oleksiy Lebedynskiy ZnWO4 films obtained by ion–beam sputtering and hydrothermal method
17:00 #Mo124 Poster Hsin-Yi Lee Fabrication of BiFeO3/LaNiO3 epitaxial superlattice structures by RF sputtering
17:00 #Mo125 Poster Arsen Muslimov Supphire Substrates With The Regular Relief Surface
17:00 #Mo126 Poster Marco Negri 3C-SiC growth and characterization using methyltrichlorosilane
17:00 #Mo127 Poster Marco Negri Influence of the growth conditions on the properties of Germanium epilayers grown by MOVPE on Si
17:00 #Mo128 Poster Takeshi Ohgaki Growth condition dependence of electric properties of ScN films on (100) MgO substrates prepared by molecular beam epitaxy
17:00 #Mo129 Poster Igor V. Osinnykh Self-compensation effect of the silicon impurity in heavily doped AlGaN layers
17:00 #Mo130 Poster Rafał M. Rapacz Spectroscopic characterization of high-quality polycrystalline Bi-Te films grown by thermal evaporation
17:00 #Mo131 Poster Hamid Rezagholipour Dizaji An Investigation on Optical and Structural Properties of Nanocrystalline CdTe Thin Films Growth by Employing a New Vapor Flow Controlling System
17:00 #Mo132 Poster Alexander M. Samoylov The Improved Procedure of Ga-doped PbTe Films One Stage Synthesis by Modified HWE Technique
17:00 #Mo133 Poster Alexander M. Samoylov Surface morphology and structure of CaF2/BaF2–on-Si epitaxial layers and the electronic properties of the interface with the substrate
17:00 #Mo134 Poster Alexander M. Samoylov Heterostructures PbTe:Ga/BaF2/CaF2/Si for IR photodetectors
17:00 #Mo135 Poster Yong Gon Seo Anisotropic characteristics of a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition
17:00 #Mo136 Poster Tatiana V. Setkova Epitaxial growth of Ga-rich tourmaline on natural elbaite seed in boric hydrothermal solutions
17:00 #Mo137 Poster Jakub Skibinski Modeling of heat and mass transfer in GaN MOVPE reactor
17:00 #Mo138 Poster Chia-Lung Tsai InGaN light-emitting diodes with an asymmetric multiple quantum well
17:00 #Mo139 Poster Mateusz Wośko u-GaN buffer resistivity control for AlGaN/GaN HEMT's
17:00 #Mo140 Poster Yuriy V. Zorenko Growth and luminescent properties of Ce and Ce-Tb doped (Y,Lu,Gd)2SiO5:Ce single crystalline films
18:30 Break

August 13th, Tuesday

10:20 TuO1 - Joan J. Carvajal (Spain) - G10: Thin film and epitaxial growth - Room C, Auditorium Maximum
10:20 00:30:00 Invited oral Eva Monroy Plasma-Assisted MBE of III-nitride semiconductors: From two-dimensional layers to nanostructures
10:50 00:30:00 Invited oral William A. Doolittle Growth Methodologies for Overcoming the Perceived Limitations of Phase Separation and p-type Doping in InGaN
11:20 00:15:00 Oral Henryk Turski Indium incorporation mechanism during InGaN growth by plasma-assisted molecular beam epitaxy
11:35 00:15:00 Oral Marta Sawicka Semipolar (2021) UV LEDs and LDs grown by PAMBE
11:50 00:15:00 Oral Shao-fu Fu Effects of ceiling temperature on In incorporation and optical properties of InGaN epilayers grown by two-heater MOCVD reactor
12:05 00:15:00 Oral Baskar Krishnan Structural and optical characterization of AlGaN/GaN layers
12:20 Lunch (IOCG Exec. Com. meeting)
14:00 TuO2 - Stefano Sanguinetti (Italy) - G10: Thin film and epitaxial growth - Room C, Auditorium Maximum
14:00 00:30:00 Invited oral Shizuo Fujita Epitaxial growth of wide band gap oxide semiconductor thin films
14:30 00:15:00 Oral Joan J. Carvajal Crystal growth of RbTiOPO4 epitaxial layers and optical waveguide applications
14:45 00:15:00 Oral Elena A. Volkova High-temperature growth and comparative characterization of (Er,Yb):YAl3(BO3)4 and NdAl3(BO3)4 epitaxial layers
15:00 00:15:00 Oral Weidong Wu The controllable growth and properties of self-assembly Ni-BaTiO3/ SrTiO3 nano-composite epitaxial film by laser molecular beam epitaxy
15:15 00:15:00 Oral Hongyang Zhao Origin of the room-temperature magnetoelectric coupling in multiferroic Bi5Ti3FeO15
15:30 Break

August 14th, Wednesday

10:20 WeO1 - Ferdinand Scholz (Germany) - G10: Thin film and epitaxial growth - Room C, Auditorium Maximum
10:20 00:30:00 Invited oral Wolfgang Stolz Novel dilute nitride III/V-semiconductor laser system for the monolithic integration to Si-microelectronics
10:50 00:15:00 Oral Hubert Valencia Ab initio Study of GaAs(100) Surfaces Under As2, H2, and N2 Influence, as a Model for Vapor-Phase Epitaxy of GaAs1-xNx
11:05 00:15:00 Oral Charles Renard Dislocation and antiphase domain-free microscale GaAs crystals grown on SiO2 from (001) and (111) Si nano-areas
11:20 00:15:00 Oral Stefano Sanguinetti Heteorepitaxy of high quality GaAs crystals on Silicon
11:35 00:15:00 Oral Hamad A. Albrithen Strontium Doped ZnO Grown by Pulsed Laser Deposition: Structural and Optical Properties
11:50 00:15:00 Oral Noriko Akutsu Pinning of steps near equilibrium without impurities, adsorbates, or dislocations
12:20 Lunch (IOCG Council meeting)
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