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Development of novel scintillating screens based on thesingle crystalline films of Ce doped multi-component (Gd,Y,Lu,La)3(Al,Ga,Sc)5O12 garnets by LPE method

Yuriy V. Zorenko 1Vitaliy Gorbenko 2Volodymyr Savchyn 2Tetyana Zorenko 2Alexander Fedorov 3

1. Instytut Fizyki, Uniwersytet Kazimierza Wielkiego w Bydgoszczy (UKW), Powstancow Wielkopolskich, Bydgoszcz 85-822, Poland
2. Electronics Department, Lviv National University, 50 Dragomanov str., Lviv 79005, Ukraine
3. Institute for Scintillation Materials NAS of Ukraine (ISMA), Lenina ave., 60, Kharkov 61001, Ukraine


The fast development of 2D/3D micro-imaging techniques using X-ray radiation strongly demands single crystalline film (SCF) scintillating screens with high ability of X-ray absorption and submicron spatial resolution [1]. Our report presents the results of pioneer research directed on the creation of new types of screens based on the SCF of Ce doped multi-component (Gd,Y,La,Lu)3(Al,Ga,Sc)5O12 garnets by liquid phase epitaxy (LPE) method. In our work we try to applied the combination of the “band-gap engineering” [2] and “5d-level positioning” strategies [3] to the basic materials - the Ce doped Y3Al5O12 (YAG) and Lu3Al5O12 (LuAG) garnets, using the alloying with Sc and Ga ions in the octahedral positions and Gd and La ions into the dodecahedral position of the LuAG and YAG hosts.

The main task in the growth SCF based on the multi-component garnets by LPE method is the decreasing of the misfit Δa between the lattices of SCF and substrate to condition of the SCF growth (Δa <0.1 % [4]). That can be achieved by the respective choice of substrate and SCF cation content. Apart the YAG substrate with lattice constant a=12.01 Ǻ, typically using for growth of YAG and LuAG based SCF, we consider also in our work the possibility of SCF crystallization by LPE method onto Gd3Ga5O12 (GGG) substrates with a=12.38 Ǻ. Namely, we successfully crystallized of the Ce-doped of the SCF of Lu3-xGdxAl5O12 and Lu3Sc2Al3O12 garnets onto YAG substrates as well as the SCF of Gd3-x(Y,Lu)xGa5-yAlyO12, Gd3-x(Y,Lu)xSc2Al3O12 and Lu3-xLax(Ga,Sc)2Al3O12 garnets onto GGG substrates using the typical PbO-B2O3 flux. The values of x and y in compositions of these garnets were changed from x=0 to 1.5 formula units.

The SCF were characterized by XRD and content analyses as well as by the absorption and cathodoluminescence (CL) spectra, light yield (LY) of CL under e-beam excitation and scintillation LY under excitation by α–particles of Pu239 (5.15 MeV) source. We found that from all SCF, grown onto YAG substrates, the best LY possess the SCF of Ce doped Lu3-xGdxAl5O12 garnets at x=0.8-1.0. From all studied SCF, grown onto GGG substrates, the best LY possess the SCF of Gd3-xYxSc2Al3O12 and Gd3-xLuxSc2Al3O12 garnets at x=0.5-0.75. We also noted the significantly large content of Pb2+ flux related impurity and their higher influence on the LY of the Ce doped SCF of multi-component garnets, grown on the GGG substrates, in comparison with SCF of garnets, grown on the YAG substrates.

For determination of the fundamental optical characteristic of studied garnets (the band gap values, the positions of Ce3+ f-d levels relatively band gap extremes; the energy formation of excitons bound with the Ce ions), the luminescent spectroscopy of (Gd,La,Y,Lu)3(AlGaSc)5O12 SCF were performed at the Superlumi station, HASYLAB, DESY under excitation by synchrotron radiation in 3.7-25 eV range.

[1] Т. Мartin, A. Koch, Journal of Synchrotron Radiation, 13, 180 (2006).

[2] M. Fasoli, A. Vedda, M. Nikl, C. Jiang, et all., Phys. Rev.,B 84, 081102 (2011).

[3] K. Kamada, T. Endo, K. Tsutumi, T. Yanagida, et all., Cryst. Growth Des., 11, 4484 (2011).

[4] Y. Zorenko, V. Gorbenko, Radiation Measurements 42, 907 (2007).

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Presentation: Oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 10, by Yuriy V. Zorenko
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-12 20:27
Revised:   2013-07-30 09:41