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ZnWO4 films obtained by ion–beam sputtering and hydrothermal method
|Oleksiy Lebedynskiy 1, Ianina Boiaryntseva 1, Alexander Dubovik 1, Alexander Fedorov 1, Konstantin Katrunov 1, Dmitriy Sofronov 1, Irina Tupitsyna 1, Anna Yakubovskaya 1, Stanislav Yakovin 2, Alexander Zykov 2, Volodymyr Savchyn 3, Yuriy V. Zorenko 3
1. Institute for Scintillation Materials NAS of Ukraine (ISMA), Lenina ave., 60, Kharkov 61001, Ukraine
ZnWO4 has the monoclinic structure with the space group P2/c and two formula units per unit cell. It is a wide band gap (about 4 eV) compound. ZnWO4 is considered as an attractive material for different applications due to its optical and chemical properties. Its potential application fields are wide from laser host material to scintillation detector.
ZnWO4 are usually used in a form of single crystals produced by Czochralski method from a melt. In order to extend application area many efforts are made to obtain and study ZnWO4 in film form. ZnWO4 films can be prepared by different methods: sol–gel, spray pyrolysis, RF sputtering of WO3 and ZnO mixture. In this work ZnWO4 films were obtained by ion-beam sputtering and hydrothermal method.
Films produced by ion beam sputtering were deposited on the glass and KBr substrates in a vacuum chamber equipped with gridless closed drift ion source of the “Radikal” type. Pure Ar and O2 at pressures 5·10-4 Torr and 4·10-4 Torr, respectively, were used for sputtering. The cleaved facet (010) of Chochralski grown ZnWO4 crystal or ZnO-WO3 hot-pressed mixture with matched to ZnWO4 weight ratio were used as a targets for ion beam sputtering. Films of 1-10 mkm thickness were obtained in a time 30-180 min at the substrate temperatures 473-573 K.
The hydrothermal synthesis of ZnWO4 films was realized with stainless-steel autoclave. For this purpose the amorphous ZnWO4 precursor was obtained according to the reaction Zn(NO3)2+Na2WO4 → ZnWO4 ↓+2NaNO3 and then filled in a stainless steel autoclave. Clean glass substrate was placed into the autoclave above the suspension surface. The tightly closed autoclave was heated to 473 K and kept at this temperature during 24 h without shaking or stirring. Thereafter autoclave was allowed to naturally cool down to room temperature. This process resulted in formation of a dense thick 10-20 mkm film on the sides of substrate.
The structure and optical properties of films obtained by both methods as well as comparison of methods applied for film production are discussed.
Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 10, by Oleksiy Lebedynskiy
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-04-10 13:51 Revised: 2013-04-10 13:51