dr Aleksandra Wierzbicka

Affiliation:

Instytut Fizyki PAN

Participant:

IX Krajowe Sympozjum Użytkowników Promieniowania Synchrotronowego

Participant:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Publications:

1. Dual-acceptor doped p-ZnO:(As+Sb)/n-GaN heterojunctions grown by PA-MBE as a highly selective UV detector
2. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
3. Epitaxial growth and characterization of zinc oxide nanorods obtained by the hydro-thermal method
4. Grown ZnMgO/ZnO/ZnMgO heterostructures on p-type Si(111) by MBE method
5. Growth and properties of inclined GaN nanowires on Si(001) substrates by PAMBE
6. Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
7. Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by MBE
8. Investigation of strain and lattice parameters distribution in epitaxial laterally overgrown InGaN/GaN structures 
9. Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
10. Mechanism of in-plane orientation of GaN self-induced nanowires grown on Si(111) substrates 
11. Modelling of X-Ray diffraction curves for GaN nanowires on Si(111)