Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
|Jolanta Borysiuk 1, Kamil Sobczak 1, Aleksandra Wierzbicka 1, Kamil Klosek 1, Marta Sobanska 1, Zbigniew R. Zytkiewicz 1, Boleslaw L. Lucznik 2|
1. Institute of Physics, Polish Academy of Sciences, Warsaw 02-668, Poland
Figure 1. TEM image of HEMT structure.
Figure 2. XRD map of the (11 4) reflection.
This work was partially supported by the European Union within European Regional Development Found, through grant Innovative Economy POIG.01.01.02-00-008/08 NanoBiom. One of the authors (JB) wishes to thank the National Science Centre (Poland) support by grant DEC-2011/03/B/ST5/02698.
Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 5, by Jolanta Borysiuk
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-04-15 19:04 Revised: 2013-07-26 09:03
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