Ab initio density functional theory (DFT) simulations were used to investigate an influence of electric field, parallel to single and multilayer graphene on its electron dispersion relations close to K point. It was shown that for both single layer and AAAA stacking multilayer graphene under influence of parallel field the dispersion relations transform to nonlinear, i.e. emergence of mass. The effect, associated with the hexagonal symmetry breaking, opens new route to high speed transistors and logical devices working in Dirac regime. The implementation of such device is presented.

This work has been supported by Polish Ministry of Science and Higher
Education within the SiCMAT Project financed under the European Founds for Regional  Development (Contract No. UDAPOIG. 01.03.01-14-155/09) and partly supported by the Polish National Science Centre on the basis of the decision No. DEC-2012/05/B/ST3/03113

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/29986 must be provided.

1. GaN/AlN junctions - density functional study
2. Density Functional Theory (DFT) study of GaN(0001) surface in ammonia rich conditions - influence of doping type
3. Growth and properties of inclined GaN nanowires on Si(001) substrates by PAMBE
4. Drift-diffusion simulations of gallium nitride based heterostructures
5. Absorption and emission spectra of InN/GaN superlattice structures by DFT methods
6. Absorption and emission spectra of AlN/GaN superlattice structures by DFT methods
7. Bulk GaAs growth by Contactless Liquid Phase Electroepitaxy
8. Adsorption of ammonia on hydrogen covered GaN(0001) surface – Density Functional Theory (DFT) study
9. Adsorption of gallium on GaN(0001) surface in ammonia rich conditions - Density Functional Theory (DFT) study
10. Density Functional Theory (DFT) study of hydrogen on GaN (0001) surface
11. Surface structure and diffusion of Si and C adatoms on bare SiC(0001) and SiC(0001) surfaces- density functional theory studies
12. Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
13. Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
14. First-principles calculations of structural and electronic properties of GaN(0001)/Ga interface
15. A density functional  theory study of the Zn, O, O₂, and H₂O adsorption on the polar ZnO(0001) and ZnO(000-1) surfaces
16. Surface morphology of InGaN layers
17. Modelling of the growth of nitrides in ammonia rich environment
18. Transport properties on nitrogen at high pressure and temperature: viscosity – MD study.
19. Adsorption processes during growth of GaN by HVPE
20. First principles study of Al(100) twisted interfaces
21. Structural properties of ZnO polymorphs
22. Rietveld refinement for polycrystalline indium nitride
23. Mass flow and reaction analysis of the growth of GaN layers by HVPE
24. Phase transition in the Nd-Fe-B system