We present a computer code for simulations of gallium nitride semiconductor devices. Our program is based on the drift-diffusion approximation. It is capable of simulating of the IV characteristics of the laser diodes and light-emitting diodes under the forward and reverse bias. It also provides approximations of the electrostatic potential, quasi-Fermi levels, carrier concentrations and many other derived values.

The implemented model accounts for radiative and Shockley-Read-Hall recombination, with or without trap-assisted tunneling, piezoelectric effect and interfacial charges. The program is written in a way that allows modifications of the underlying model, so this list is not final and we will include additional phenomena in the future. Our program is written in mixed Octave/C++, which makes it computationally effective and rather flexible in modification.

On our poster we present the model, algorithm, and examples of simulations performed with this program. In particular, simulation results of AlInGaN multiple quantum well heterostructures are discussed.

The research was supported by the European Union within European Regional Development Fund, through grant Innovative Economy (POIG.01.01.02-00-008/08).

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