Drift-diffusion simulations of gallium nitride based heterostructures
|Konrad Sakowski 1,2, Pawel Strak 1, Stanisław Krukowski 1,3, Leszek Marcinkowski 2|
1. Polish Academy of Sciences, Institute of High Pressure Physics (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
We present a computer code for simulations of gallium nitride semiconductor devices. Our program is based on the drift-diffusion approximation. It is capable of simulating of the IV characteristics of the laser diodes and light-emitting diodes under the forward and reverse bias. It also provides approximations of the electrostatic potential, quasi-Fermi levels, carrier concentrations and many other derived values.
Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 3, by Konrad Sakowski
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-04-30 15:33 Revised: 2013-04-30 15:33
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