LPEE has been found to be very effective for the growth of bulk crystals of multicomponent semiconductors. In particular, the LPEE grown crystals show compositional uniformity that is not attainable by other solution or melt growth methods (see [1] for a review). Unfortunately, as shown experimentally [2] and theoretically [3, 4] thickness of crystals feasible by LPEE is limited to ~3-4 mm. This is due to Joule heating in the body of growing crystal, which finally leads to complete termination of the growth. In this work we present a design for the growth of bulk III-V crystals by electroepitaxy which avoids severe drawbacks of standard LPEE. This liquid-phase technique allowing one to grow large-size single crystals in nearly isothermal conditions by application of electric current flow is presented. The technique, denoted as contactless liquid-phase electroepitaxy (CLPEE) method paves the way to obtain large-diameter high crystalline quality single crystals with potentially unlimited thickness. Systematic studies of influence of crucible design on uniformity of growth of bulk III-V crystals are reported. We found that CLPEE removes the most important drawback of standard liquid phase electroepitaxy, i.e. limited thickness of crystals being due to superheating of the growing crystals by Joule heat generation. However, the CLPEE method in its simplest version suffers from enhanced growth rate at the center of the crystal, which results from majority of electric current flowing to the center of the electrode and dragging solute species [5]. A number of various designs of growth crucible are examined showing that optimized triple-electrode system is capable to provide perfectly uniform growth rate distribution over a large portion of the surface of the growing crystal [6]. In this way the main obstacle in development of the CLPEE technique is removed allowing application of electroepitaxy to obtain large diameter high crystalline quality single crystals with potentially unlimited thickness.

[1] T. Bryskiewicz, Prog. Crystal Growth and Characterization 12 (1986) 29.

[2] Z.R. Zytkiewicz, J. Crystal Growth 146 (1995) 283.

[3] Z. R. Zytkiewicz, J. Cryst. Growth 172 (1997) 259.

[4] P. Strak, Z.R. Zytkiewicz, K. Sakowski, and S. Krukowski, Cryst. Res. Technol. 45 (2010)

1290.

[5] Z. R. Zytkiewicz, P. Strak, S. Krukowski, Crystal Growth and Design  11 (2011) 4684

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/29934 must be provided.

1. GaN/AlN junctions - density functional study
2. Density Functional Theory (DFT) study of GaN(0001) surface in ammonia rich conditions - influence of doping type
3. Growth and properties of inclined GaN nanowires on Si(001) substrates by PAMBE
4. Optimization of nitrogen plasma source parameters for growth of GaN by MBE
5. An influence of parallel electric field on the dispersion relation of graphene – a new route to Dirac logics
6. Drift-diffusion simulations of gallium nitride based heterostructures
7. Mechanism of in-plane orientation of GaN self-induced nanowires grown on Si(111) substrates 
8. Absorption and emission spectra of InN/GaN superlattice structures by DFT methods
9. Absorption and emission spectra of AlN/GaN superlattice structures by DFT methods
10. Adsorption of ammonia on hydrogen covered GaN(0001) surface – Density Functional Theory (DFT) study
11. Adsorption of gallium on GaN(0001) surface in ammonia rich conditions - Density Functional Theory (DFT) study
12. Density Functional Theory (DFT) study of hydrogen on GaN (0001) surface
13. Surface structure and diffusion of Si and C adatoms on bare SiC(0001) and SiC(0001) surfaces- density functional theory studies
14. Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
15. Modelling of X-Ray diffraction curves for GaN nanowires on Si(111)
16. Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
17. First-principles calculations of structural and electronic properties of GaN(0001)/Ga interface
18. A density functional  theory study of the Zn, O, O₂, and H₂O adsorption on the polar ZnO(0001) and ZnO(000-1) surfaces
19. MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications 
20. Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by MBE
21. Investigation of strain and lattice parameters distribution in epitaxial laterally overgrown InGaN/GaN structures 
22. Innowacyjne technologie wielofunkcyjnych materiałów i struktur dla nanoelektroniki, fotoniki, spintroniki i technik sensorowych (InTechFun).
23. Surface morphology of InGaN layers
24. Modelling of the growth of nitrides in ammonia rich environment
25. Transport properties on nitrogen at high pressure and temperature: viscosity – MD study.
26. Adsorption processes during growth of GaN by HVPE
27. Liquid phase growth and characterization of laterally overgrown GaSb epitaxial layers
28. Distribution of strain in laterally overgrown GaAs layers determined by x-ray diffraction
29. Rietveld refinement for polycrystalline indium nitride
30. Mass flow and reaction analysis of the growth of GaN layers by HVPE
31. Structure modifications in materials irradiated by ultra-short pulses of VUV free electron laser
32. Novel substrates for heteroepitaxy by lateral overgrowth technology