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- Kamil Klosek
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Affiliation:
Polish Academy of Sciences, Institute of Physics
address:
Lotnikow 32/46, Warsaw, 02-668,
Poland
phone:
+48-22-8436034
fax:
+4-22-8430926
web:
http://www.ifpan.edu.pl
Participant:
15th Summer School on Crystal Growth - ISSCG-15
began:
2013-08-04
ended:
2013-08-10
Presented:
15th Summer School on Crystal Growth - ISSCG-15
Optimization of nitrogen plasma source parameters for growth of GaN by MBE
Participant:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
began:
2013-08-11
ended:
2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications
Publications:
Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by MBE
MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications
Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
Mechanism of in-plane orientation of GaN self-induced nanowires grown on Si(111) substrates
Optimization of nitrogen plasma source parameters for growth of GaN by MBE
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