- Kamil Klosek

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Affiliation:


Polish Academy of Sciences, Institute of Physics

address: Lotnikow 32/46, Warsaw, 02-668, Poland
phone: +48-22-8436034
fax: +4-22-8430926
web: http://www.ifpan.edu.pl

Participant:


15th Summer School on Crystal Growth - ISSCG-15

began: 2013-08-04
ended: 2013-08-10
Presented:

15th Summer School on Crystal Growth - ISSCG-15

Optimization of nitrogen plasma source parameters for growth of GaN by MBE

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications 

Publications:


  1. Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
  2. Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by MBE
  3. MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications 
  4. Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
  5. Mechanism of in-plane orientation of GaN self-induced nanowires grown on Si(111) substrates 
  6. Optimization of nitrogen plasma source parameters for growth of GaN by MBE



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