- Marta Sobanska

Affiliation:

Polish Academy of Sciences, Institute of Physics

Participant:

15th Summer School on Crystal Growth - ISSCG-15

Participant:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Publications:

1. Growth and properties of inclined GaN nanowires on Si(001) substrates by PAMBE
2. Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
3. Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by MBE
4. MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications 
5. Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
6. Mechanism of in-plane orientation of GaN self-induced nanowires grown on Si(111) substrates 
7. Modelling of X-Ray diffraction curves for GaN nanowires on Si(111)
8. Optimization of nitrogen plasma source parameters for growth of GaN by MBE