In the present study, the quantitative relationship between gas flow and epitaxial growth of GaN is addressed. Since there are many agents influencing reaction on crystal area such as temperature, pressure, gas flow, reactor geometry, it is difficult to design optimal process. Experimental analysis is difficult mainly due to high temperature and flow disturbance caused by introducing measuring probes. Numerical simulations allow to understand the process by calculation of heat and mass transfer distribution during growth process of GaN.

This study concerns influence of the inlet gases on the process of crystal growth. In order to investigate this subject a series of computer simulations and experimental processes have been performed. The software used for these calculations was ANSYS Fluent.

To study the influence of reagents mass flow rate on the crystal growth, model of MOVPE reactor has been created. The finite element mesh of 300.000 triangular elements has been created for the geometry of the reactor. The mesh is refined over the chemical reaction area, since it’s the area of biggest importance, and mesh should be the most accurate above it.

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