Modeling of heat and mass transfer in GaN MOVPE reactor

Jakub Skibinski 1Tomasz Wejrzanowski 1Piotr Caban 2Włodzimierz Strupiński 2

1. Warsaw University of Technology, Faculty of Materials Science and Engineering (InMat), Wołoska 141, Warszawa 02-507, Poland
2. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland


In the present study, the quantitative relationship between gas flow and epitaxial growth of GaN is addressed. Since there are many agents influencing reaction on crystal area such as temperature, pressure, gas flow, reactor geometry, it is difficult to design optimal process. Experimental analysis is difficult mainly due to high temperature and flow disturbance caused by introducing measuring probes. Numerical simulations allow to understand the process by calculation of heat and mass transfer distribution during growth process of GaN.

This study concerns influence of the inlet gases on the process of crystal growth. In order to investigate this subject a series of computer simulations and experimental processes have been performed. The software used for these calculations was ANSYS Fluent.

To study the influence of reagents mass flow rate on the crystal growth, model of MOVPE reactor has been created. The finite element mesh of 300.000 triangular elements has been created for the geometry of the reactor. The mesh is refined over the chemical reaction area, since it’s the area of biggest importance, and mesh should be the most accurate above it.

Preliminary results show, that flow parameters change according to mass flow rates of gases. The study exhibited that velocity profile in reactor depends on temperature of the reactor walls, mass flow rate on the inlet and rotation of the plate. Reactor geometry gets a symmetric plane but because of the rotation of the plate, velocity profile inside the reactor doesn’t get such plane. This asymmetric flow changes the proportion of hydrogen and gases that participate in chemical reactions over plate. It was found that the rotation of the plate does not influence temperature distribution over the growth area.

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Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 10, by Jakub Skibinski
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-15 15:50
Revised:   2013-04-15 15:51
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