Modeling of growth kinetics of SiC single crystal in PVT process

Tomasz Wejrzanowski 1Janusz Dagiel 1Mateusz Grybczuk 1Jakub Niescior 1Emil Tymicki 2Krzysztof J. Kurzydlowski 1

1. Warsaw University of Technology, Faculty of Materials Science and Engineering (InMat), Wołoska 141, Warszawa 02-507, Poland
2. Institute of Electronic Materials Technology (ITME), Warszawa 01919, Poland


The present paper deals with the design of optimal process conditions for manufacturing of single crystalline SiC with high quality. Different aspects of the technology have been taken into account. The geometry of the reactor was modified to obtain optimal mass transport and temperature profile. The influence of process conditions on the SiC crystal growth kinetics has been also studied. The results of modeling have been implemented in the SiC growth process developed for commercial use.

In these studies the Finite Volume method was applied to understand the phenomena taking place in the PVT (Physical Vapor Transport) reactor during growth of bulk SiC single crystal.

Numerical simulations predict the temperature distribution and growth kinetics at satisfactory level. It was found that especially the early stage of crystal growth might be controlled by changing the insulation types. Apart from the thermal conditions, which can be controlled directly by setting up the temperature on the heaters or indirectly by modification of insulation geometry, the gas pressure in the chamber is of key importance for the growth rate of SiC bulk single crystal.

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Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 3, by Tomasz Wejrzanowski
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-15 13:53
Revised:   2013-04-15 13:53
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