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Evaluation of crystal structure and polytypism of SiC in microwave sintered diamond-SiC composite by TEM and HR-TEM

Paulina Unifantowicz 1,2,  Sébastien Vaucher ,  Malgorzata Lewandowska 2,  Krzysztof J. Kurzydlowski 2

1. EMPA Materials Research and Technology (EMPA), Feuerwerkerstr. 39, Thun 3602, Switzerland
2. Warsaw University of Technology, Faculty of Materials Science and Engineering (InMat), Wołoska 141, Warszawa 02-507, Poland

Abstract

TEM technique is used for an investigation of silicon carbide crystals produced during reactive microwave sintering of diamond monocrystals and silicon powder. The presence of double SiC layer on the diamond (100) face has been revealed which consists of SiC nanocrystals at the diamond interface and microcrystalline SiC at the top. Despite the presence of disordered interlayer, crystallographic orientation of the latter was found to match the orientation of the diamond substrate. Electron diffraction images show several polytypes of alpha-SiC. The results of the TEM and HR-TEM analysis will be presented and discussed in detail, and their implication to the SiC growth mechanism will be discussed.

 

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Presentation: Oral at E-MRS Fall Meeting 2007, Symposium J, by Paulina Unifantowicz
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-09 14:53
Revised:   2009-06-07 00:44