Recently, ferromagnetic semiconductors have attracted much interest due to potential applications in spin-based information-processing technologies. SiC is a good candidate for spintronic investigations because of its wide bandgap (3.0 eV for 6H polytype) and due to potential technological applications. Recently, magnetic properties of Fe- implanted SiC were investigated [1]. In the present studies SiC crystals were grown by Physical Vapor Transport method. We used Fe enriched source material to dope crystals. The growth temperature was equal to 2150⁰C. DC magnetization measurements performed at low temperatures and low magnetic fields revealed ferromagnetic type of magnetic ordering. In the low magnetic field magnetization data the hysteresis loops are present. The structural investigation using powder XRD were performed. The presence of nonmagnetic FeSi precipitates ([2]) was observed. We will present the systematic magnetic measurements including AC susceptibility and DC magnetization up to 9T in the range of low and high temperatures as well as structural studies using powder XRD. The chemical analysis using SIMS will be performed. The origin of ferromagnetic behaviour will be discussed.

[1] N. Theodoropoulou et al., Electrochemical and Solid-State Letters, 4 (12) G119-G121 (2001)

[2] V. Jaccarino et al., Phys. Rev. 160, 476, (1967)

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/8224 must be provided.

1. Modeling of growth kinetics of SiC single crystal in PVT process
2. The influence of the PVT growth conditions on the SiC crystal shape
3. Optical Characterisation of Bulk ZnO Crystals Grown by CVT
4. Growth of SiC by PVT method with different sources of the cerium impurity, CeO₂ or CeSi₂
5. The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
6. Raman scattering from ZnO doped with Fe, Mn and Co nanoparticles
7. Lattice dynamics and Raman spectroscopy of ZnO:Mn crystals
8. Low-frequency Raman scattering from transition-metal-doped ZnO nanoparticles
9. ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.
10. Initial Stage of SiC Crystal Growth by PVT Method
11. Preparation of the ZnO substrate surface
12. Stability diagram for crystal growth from the vapor
13. Ferromagnetism in ZnO:Mn thin films deposited by PEMOCVD
14. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
15. Structure properties of bulk ZnO crystals
16. Ferromagnetism of In_1-XMn_XSe and behaviour of excess Mn in InSe crystal
17. Magneto-conductance through nanoconstriction in ferromagnetic (Ga,Mn)As film
18. ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
19. CVT contactless growth of ZnO crystals