ZnO is one of the most perspective materials for spintronics and for applications as diluted magnetic semiconductor being doped by transition metals such as Mn or Co. We have deposited ZnO thin films doped by different Mn amount (1, 5, 10, 15 wt% in precursors mixture) by plasma enhanced metalorganic chemical vapor deposition (PEMOCVD). Sapphire (0001) was used as substrate and films thickness was up to 300 nm. Structure analysis was realized by XRD, and no Mn separate phase has been found. Only peaks, peculiar to ZnO were observed. However all samples had the textured orientation along c-axis, the films crystallinity was found to deteriorate with Mn content increasing. Also the ZnO lattice parameters were changed, thus we assumed that Mn has incorporated into ZnO lattice. By means of XRF analysis we determined the real content of Mn in films what was in correlation with precursor's mixture composition. Morphology of ZnO:Mn films was investigated by AFM and the surface roughness was observed monotonically to decrease with Mn content increasing. Magnetic properties were investigated by SQUID and the ferromagnetic behavior was observed at low temperatures. Such magnetic behavior was found to increase with Mn content increasing. The most reliable hysteresis loop was observed for ZnO with 7 wt. % of Mn. The results obtained are discussed.

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