Spintronics is one of the most promising directions of nano-electronics. To realize predicted devices we should master technology of ferromagnetic semiconductors, which is necessary step for high efficiency of injection of spin polarized carriers. Ferromagnetism (FM) above room temperature has been predicted for heavily doped p-type ZnMnO [1], which is thus considered as a promising material for spintronics. It has been found, however, that the often observed ferromagnetism of ZnMnO relates not to alloy properties, but to the presence of Mn precipitates in ZnMnO and also to the formation of foreign phase inclusions of various Mn_xO_y oxides. These oxides show strong magnetic ordering as anti-, ferro-, and ferrimagnetic oxides are formed [2].

We used Atomic Layer Deposition (ALD) to grow ZnMnO films. Very low growth temperatures, from 160ºC up to 400ºC, were crucial to block formation of foreign phases. We used two types of Mn precursors: Mn(thd)₃ and Mn(acac)₃, and two types of Zn precursors, viz. zinc acetate (Zn(OAc)₂) and diethyl zinc (DEZn). These films exhibit controlled magnetic properties. Properties of obtained materials will be discussed based on structural and magnetic investigations.

[1] T. Dietl, H. Ohno, and F. Matsukura, Science 287, 1019 (2000)

[2] C. Liu, F. Yun, H. Mokoc, J. Mater. Sci.: Mater. Electron. 16, 555 (2005).

Microchemistry F-120 ALE reactor was financed by Foundation for the Polish Science within the Sezam program.

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