Atomic layer deposition (ALD) method enables a low temperature (LT) growth, using reactive organic precursors. This is possible, since reaction precursors are sequentially introduced to a growth chamber. Thus, they meet only at a surface of a growing film. Our recent investigations indicated that LT growth is the most promising way to avoid formation of foreign phase inclusions of Mn_xO_y in ZnMnO material and to block spinodal decomposition [1-3]. This are crucial steps for obtaining material with controlled magnetic properties. ZnMnO is intensively studied for spintronics applications at present. It was clearly shown that inclusions of various Mn oxides, which are present in most of films grown with high temperature methods, give dominating magnetic response of the ZnMnO samples.

In this presentation we discuss growth conditions of LT ZnMnO with the ALD method optimized to get the required structural and magnetic properties. We show that LT ALD films of ZnMnO, those obtained with either zinc acetate or DEZn and Mn(acac)₃ or Mn(thd)₃ as zinc and manganese precursors, are practically inclusions free. The so-obtained material is promising for spintronics applications under the condition that p-type doping will be improved.

1. A. Wójcik, K. Kopalko, M. Godlewski, E. Guziewicz, R. Jakieła, R. Minikayev, W. Paszkowicz

Appl. Phys. Lett. 89, 051907 (2006).

2. A. Tomaszewska – Grzęda, A. Opalińska, E. Grzanka, W. Łojkowski A. Gedanken, M. Godlewski, S. Yatsunenko, V. Osinniy, and T. Story

Appl. Phys. Lett. 89, 242102 (2006)

3. A. Wójcik, M. Godlewski, E. Guziewicz, R. Jakieła, M. Kiecana, M. Sawicki, M. Guziewicz, M. Putkonen, L. Niinistö, Y. Dumont, and N. Keller

Appl. Phys. Lett. (in press)

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