We report growth of monocrystalline and polycrystalline thin films of ZnO by atomic layer epitaxy (ALE), often referred to as atomic layer deposition (ALD). ZnO films were grown on several substrates. Monocrystalline films were obtained using GaN/Al2O3 as a substrate, whereas use of sapphire, silicon, GaAs or lime glass resulted in either 3D growth mode or in polycrystalline films showing preferential orientation of the c axis. Crystalline properties of the films are studied with atomic force microscopy and X-ray diffraction techniques. Monocrystalline ZnO films show the structural quality limited by that of the GaN template and very flat surfaces, with roughness below 1 nm RMS. Polycrystalline films are often rougher, showing granular micro-structure. Influence of growth conditions, precursors used and post-growth annealing will be discussed.


This work was partly supported by grant no. PBZ-KBN-044/P03/2001 of KBN. The ALE reactor was bought using SEZAM grant of Foundation for Polish Science.

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