ZnO films were deposited by PEMOCVD, magnetron sputtering (MS) and reactive thermal evaporation on Al₂O₃ (0001), SiO₂/Si (100) and SiN_x/Si. Photoluminescence (PL) of as-grown and annealed ZnO films were studied at room temperature in range 350-800 nm by femptosecond sapphire:Ti laser (37 mW, 170 fs, 76 MHz). Annealing of ZnO films was carried out in air at 600-1000^oC during 2-9 h.
As-grown ZnO films deposited by PEMOCVD on SiN_x/Si were revealed the most intense near band edge (NBE) photoluminesense peaked at 3.27 eV. ZnO films deposited on SiO₂/Si (100) and Al₂O₃ (0001) were characterized both NBE and broad deep-level luminescence. Annealing of samples results in significant decreasing of NBE PL. At the same time the deep-level luminescence at 2.39 eV sufficiently increases. It was revealed the influence of ZnO texture on PL intensity of films deposited by MS. The most intense PL was observed in samples with c-axis situated in plane of Al₂O₃ substrate. Annealing the samples also results in suppression of NBE PL.
Obtained results can be explained by oxygen diffusion through film-substrate interface during processes of growth and annealing, increasing of stresses in films at annealing as a result of large misfit between ZnO and Al₂O₃ substrates in periods of crystal lattice and thermal expansion coefficients.

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