Quantum semiconductor nanostructures for applications in biology and medicine -development and commercialisation of new generation devices for molecular diagnostics on the basis of new Polish semiconductor devices
|Marek Godlewski , Leszek Sirko|
Instytut Fizyki PAN, Al. Lotnikow 32/46, Warszawa 02668, Poland
The project of the Operational Programme - Innovative Economy POIG.01.01.02-00-008/08 aims at development ofmodern GaN, ZnO and related materials nano- and semiconductor structures for diagnostic devices for applications in biology, medicine and environmental protection, materials technology for sensors and molecular diagnostic applications.The project is realized by the seven scientific institutions:
In the presentation we will discuss important technological and scientific achievements of the project. Some of them are outlined below.
The Institute of Physics PAS works on new generations of nanosensors based on thin films of two wide band gap semiconductors – ZnO and GaN, on their heterojunctions and quantum well structures. We also investigate biosensors based on nanoparticles for applications as fluorescence labeling. Examples of such applications will be presented.
The main achievement in the Institute of Physical Chemistry PAS was the development and fabrication of a series of novel chemosensing polymer films for recognition and determination of biologically important analytes, such as melamine, nicotine, or ATP. The devised polymer films based on derivatives of bis(2,2’-bithienyl)methane and zinc porphyrin were successfully deposited by electrochemical polymerization on either quartz crystal resonators, or metal electrodes to result in either piezomicrogravimetric or impedimetric chemosensors with high sensitivity, selectivity, and detectability toward studied analytes. One should also stress successful development of a wide range of film electrodes modified with nanomaterials and/or enzymes with prospective application in sensors and energy conversion devices.
The Institute of High Pressure Physics PAS developed the method of crystallization of large size GaN substrates, grown by combination of HVPE and High Pressure methods, with the size up to 2 inch and very low dislocation density, suitable to application as plasmonic substrates for blue and green lasers. IHPP PAS constructed, as the second laboratory in the world, the violet superluminescent diodes (SLED) of high power of 200 mW. Multi-laser lines (3-30), emitting at 400-440 nm of power higher than 4 W continuous work (CW) have been obtained.
Presentation: Oral at Nano and Advanced Materials Workshop and Fair, by Marek Godlewski
See On-line Journal of Nano and Advanced Materials Workshop and Fair
Submitted: 2013-07-20 11:17 Revised: 2013-07-20 11:17
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