The project of the Operational Programme - Innovative Economy POIG.01.01.02-00-008/08 aims at development ofmodern GaN, ZnO and related materials nano- and semiconductor structures for diagnostic devices for applications in biology, medicine and environmental protection, materials technology for sensors and molecular diagnostic applications.

1. Institute of Physics of the PolishAcademy of Sciences - coordinator
2. Institute of High Pressure Physics of the PolishAcademy of Sciences
3. Institute of Physical Chemistry of the Polish Academy of Sciences
4. Wrocław University of Technology, Faculty of Microsystems Electronics and Photonics
5. Institute of Electron Technology
6. Nencki Institute of Experimental Biology of the PolishAcademy of Sciences
7. University of Warsaw, Interdisciplinary Centre for Mathematical and Computational Modelling

In the presentation we will discuss important technological and scientific achievements of the project. Some of them are outlined below.

The Institute of Physics PAS works on new generations of nanosensors based on thin films of two wide band gap semiconductors – ZnO and GaN, on their heterojunctions and quantum well structures. We also investigate biosensors based on nanoparticles for applications as fluorescence labeling. Examples of such applications will be presented.

The main achievement in the Institute of Physical Chemistry PAS was the development and fabrication of a series of novel chemosensing polymer films for recognition and determination of biologically important analytes, such as melamine, nicotine, or ATP. The devised polymer films based on derivatives of bis(2,2’-bithienyl)methane and zinc porphyrin were successfully deposited by electrochemical polymerization on either quartz crystal resonators, or metal electrodes to result in either piezomicrogravimetric or impedimetric chemosensors with high sensitivity, selectivity, and detectability toward studied analytes. One should also stress successful development of a wide range of film electrodes modified with nanomaterials and/or enzymes with prospective application in sensors and energy conversion devices.

The Institute of High Pressure Physics PAS developed the method of crystallization of large size GaN substrates, grown by combination of HVPE and High Pressure methods, with the size up to 2 inch and very low dislocation density, suitable to application as plasmonic substrates for blue and green lasers. IHPP PAS constructed, as the second laboratory in the world, the violet superluminescent diodes (SLED) of high power of 200 mW. Multi-laser lines (3-30), emitting at 400-440 nm of power higher than 4 W continuous work (CW) have been obtained.

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1. Nanoparticles for medical imaging 
2. The effect of annealing on properties of Europium doped ZnO nanopowders obtained by a microwave hydrothermal method
3. Microwave conductivity of ZnO:Co and ZnO:Cu thin films with nano-size metallic Co/Cu inclusions.
4. Tb³⁺ ion luminescence enhancement in yttria host lattice obtained via microwave hydrothermal process
5. Hydrothermal growth of ZnO nanorods for solar cells applications
6. Epitaxial growth and characterization of zinc oxide nanorods obtained by the hydro-thermal method
7. Growth of zinc oxide and dielectric films using Atomic Layer Deposition method from organic precursors
8. Rezonansowe badania fotoemisyjne ferromagnetycznych warstw ZnCoO
9. Resonant photoemission study of Sm atoms on ZnO surface
10. Mangan w warstwach ZnMnO hodowanych metodą osadzania warstw atomowych
11. Lokalne otoczenie atomów kobaltu w cienkich warstwach ZnCoO
12. Contactless electroreflectance of ZnSe layers grown by atomic layer epitaxy
13. Electrical and optical properties of zinc oxide layers obtained by Atomic Layer Deposition
14. Zinc oxide grown by Atomic Layer Deposition - a material for novel 3D electronics
15. Dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by Atomic Layer Deposition
16. Thin films of ZnS and ZnSe by Atomic Layer Deposition for light sensor applications
17. Photovoltaic cells based on nickel phthalocyanine and zinc oxide formed by atomic layer deposition
18. Effects related to deposition temperature of ZnCoO films grown by Atomic Layer Deposition – uniformity of Co distribution, structural, electric and magnetic properties
19. Effect of annealing on the structure and microstructure of Pr doped ZrO₂-Y₂O₃ nanocrystals
20. Synthesis of doped ZnO nanopowders in microwave hydrothermal reactors
21. Synthesis of Al doped ZnO nanopowders and their enhanced luminescence
22. How we can stimulate intra-shell emissions of rare earth and transition metal ions in thin films and in nanoparticles
23. ZnO thin films for organic/inorganic heterojunctions
24. Combining microwave and pressure techniques for hydrothermal synthesis of ZnO and ZrO₂ nanopowders doped with a range of metal ions
25. Luminescence properties of zinc oxide nanopowders doped with Al ions obtained by the hydrothermal and vapour condensation methods.
26. Wide band-gap II-VI semiconductors for optoelectronic applications
27. Low temperature ZnMnO by ALD
28. ZnMnO Films grown by Atomic Layer Deposition with uniform Mn distribution
29. Effect of annealing on electrical properties of low temperature ZnO films
30. Doping of ZnO nanopowders with Mn, Ni and Cr In an ultrasound and microwave driver hydrothermal reaction
31. Time-resolved ODMR investigations of II-VI based DMS heterostructures
32. Method of Manganese co-doping of LT ZnO films
33. Photoluminescence of ZnO films studied by femptosecond sapphire:Ti laser
34. Two color spectroscopy of ZnSe:Cr
35. Photo-EPR studies of charge tunneling processes in Cd_xZn_(1-x)Se:Fe,Cr (0 ≤ x ≤ 0.3) crystals
36. Luminescence of CdMnTe Crystals in Magnetic Field
37. Luminescence of doped nanoparticles of wide band gap II-VI compounds
38. Doping of ZnO nanopowders with Mn and Cr in an ultrasound and microwave driven hydrothermal reaction
39. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
40. Dynamics of spin interactions in II-Mn-VI semiconductors studied with time-resolved optically detected magnetic resonance
41. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
42. Fe photoionization transition in ZnSSe:Fe crystals - photo-ESR studies
43. In-depth and in-plane profiling of InGaN-based laser diodes and heterostructures
44. Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
45. Compensation mechanisms in magnesium doped GaN
46. Optical and magnetic resonance investigations of ZnO crystals doped with transition metal ions
47. Optical and ODMR study of GaN-based HEMT structures
48. Photo-ESR and optical studies of Cr photoionization transition in CdZnSe:Cr crystals
49. Luminescent properties of wide bandgap materials at room temperature