Thin films of ZnS and ZnSe were grown by the Atomic Layer Deposition (ALD) method using three different procedures. In the ALD process we used either: a) a double exchange reaction (for ZnS, using ZnCl₂ as inorganic zinc precursor and H₂S as sulphur precursor); b) single exchange reaction (for ZnS, using atomic Zn and H₂S as sulphur precursor); or c) synthesis (for ZnS and ZnSe, using atomic zinc and sulphur or selenium). ZnS and ZnSe films obtained on this way were deposited on various substrates, including lattice matched ones (GaAs for ZnSe). For device applications ZnS and ZnSe were deposited on plated pyroceramic substrates covered with CdS or CdSe by the sublimation quasi-closed method. In this case ZnS and ZnSe layers were deposited to form heterostructures of II-VI semiconductors for light sensor applications, for highly efficient photo-detectors, of the type proposed in the reference [1].

In this report we analyze structural, optical and electrical properties of ALD deposited films. In particular, we compare properties of ZnS films obtained by the three different ALD approaches, as mentioned above. We demonstrate that films grown at increased temperature and lattice matched substrates are crystalline.

 1. A.V. Komashchenko, K.V. Kolezhuk, P.P. Gorbik, M.O. Mai, G.I. Sheremetova, Technical Physics Letters 26, 179 (2000).

 The research was partially supported by the European Union within European Regional Development Fund, through grant Innovative Economy (POIG.01.01.02-00-008/08).

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