Due to its unique electrical and optical properties, zinc oxide is regarded as a very prospective material in electronic, photovoltaic and optoelectronic applications (including gas sensors, piezoelectric transducers, solar cells and cross-bar memories). All of these applications require stable and controllable in time electrical parameters of obtained zinc oxide thin films, possibly achieved without any post-growth treatment of the deposited ZnO layers.

We present the results of Hall effect measurements on zinc oxide thin films grown at low temperature (LT) by Atomic Layer Deposition (ALD) method using diethylzinc (DEZn) and deionized water as precursors. Our films were deposited at the temperature range between 60°C and 200°C. Electrical parameters of such ZnO layers may be scaled by adjusting the basic growth conditions, such as growth temperature and reciprocal relations between precursors’ pulse/purging times [1]. In this way by introducing slight changes of deposition parameters we are able to obtain ZnO layers with substantially varied n concentration (from 10¹⁶ – 10²⁰cm^-3) and Hall mobility (up to 100cm²/Vs).

The present investigations’ aim is to examine and compare the changes in electrical and optical parameters of ZnO films after the appropriate measurements performed at low temperature range. The relations between structural, optical, and electrical parameters of zinc oxide films will be shown, provided by composition analysis, cathodoluminescence, pholuminescence and Hall effect measurements. This helps to understand the nature of n type conductivity observed in ZnO thin films.

[1] E. Guziewicz et al. J. Appl. Phys. 103, 033515 (2008)

The research was partially supported by the European Union within European Regional Development Fund, through grant Innovative Economy (POIG.01.01.02-00-008/08).

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/18274 must be provided.

1. Nanoparticles for medical imaging 
2. The effect of annealing on properties of Europium doped ZnO nanopowders obtained by a microwave hydrothermal method
3. Microwave conductivity of ZnO:Co and ZnO:Cu thin films with nano-size metallic Co/Cu inclusions.
4. Tb³⁺ ion luminescence enhancement in yttria host lattice obtained via microwave hydrothermal process
5. Quantum semiconductor nanostructures for applications in biology and medicine -development and commercialisation of new generation devices for molecular diagnostics on the basis of new Polish semiconductor devices
6. Zinc oxide films grown by atomic layer deposition: from material properties to device applications
7. MBE growth, structural, magnetic, and electric properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires
8. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
9. Hydrothermal growth of ZnO nanorods for solar cells applications
10. Epitaxial growth and characterization of zinc oxide nanorods obtained by the hydro-thermal method
11. Growth of zinc oxide and dielectric films using Atomic Layer Deposition method from organic precursors
12. Grown ZnMgO/ZnO/ZnMgO heterostructures on p-type Si(111) by MBE method
13. Dual-acceptor doped p-ZnO:(As+Sb)/n-GaN heterojunctions grown by PA-MBE as a highly selective UV detector
14. Rezonansowe badania fotoemisyjne ferromagnetycznych warstw ZnCoO
15. Resonant photoemission study of Sm atoms on ZnO surface
16. Mangan w warstwach ZnMnO hodowanych metodą osadzania warstw atomowych
17. ZnO and core/shell ZnO/ZnS nanofibers: Characterization and applications
18. Lokalne otoczenie atomów kobaltu w cienkich warstwach ZnCoO
19. Contactless electroreflectance of ZnSe layers grown by atomic layer epitaxy
20. Zinc oxide grown by Atomic Layer Deposition - a material for novel 3D electronics
21. Dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by Atomic Layer Deposition
22. Thin films of ZnS and ZnSe by Atomic Layer Deposition for light sensor applications
23. Photovoltaic cells based on nickel phthalocyanine and zinc oxide formed by atomic layer deposition
24. Effects related to deposition temperature of ZnCoO films grown by Atomic Layer Deposition – uniformity of Co distribution, structural, electric and magnetic properties
25. Transparent p-type ZnO obtained by Ag doping
26. Effect of annealing on the structure and microstructure of Pr doped ZrO₂-Y₂O₃ nanocrystals
27. Synthesis of doped ZnO nanopowders in microwave hydrothermal reactors
28. Synthesis of Al doped ZnO nanopowders and their enhanced luminescence
29. How we can stimulate intra-shell emissions of rare earth and transition metal ions in thin films and in nanoparticles
30. ZnO thin films for organic/inorganic heterojunctions
31. Combining microwave and pressure techniques for hydrothermal synthesis of ZnO and ZrO₂ nanopowders doped with a range of metal ions
32. Luminescence properties of zinc oxide nanopowders doped with Al ions obtained by the hydrothermal and vapour condensation methods.
33. Gd atoms on Si (111) surface – AFM and photoemission study
34. Wide band-gap II-VI semiconductors for optoelectronic applications
35. ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.
36. Low temperature ZnMnO by ALD
37. ZnMnO Films grown by Atomic Layer Deposition with uniform Mn distribution
38. Effect of annealing on electrical properties of low temperature ZnO films
39. Doping of ZnO nanopowders with Mn, Ni and Cr In an ultrasound and microwave driver hydrothermal reaction
40. Time-resolved ODMR investigations of II-VI based DMS heterostructures
41. Method of Manganese co-doping of LT ZnO films
42. Photoluminescence of ZnO films studied by femptosecond sapphire:Ti laser
43. Optical properties of p-type ZnO:(N, As, Sb)
44. Optical and magnetooptical properties of the p-type ZnMnO.
45. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
46. Two color spectroscopy of ZnSe:Cr
47. Photo-EPR studies of charge tunneling processes in Cd_xZn_(1-x)Se:Fe,Cr (0 ≤ x ≤ 0.3) crystals
48. Luminescence of CdMnTe Crystals in Magnetic Field
49. Luminescence of doped nanoparticles of wide band gap II-VI compounds
50. Doping of ZnO nanopowders with Mn and Cr in an ultrasound and microwave driven hydrothermal reaction
51. Preparation and characterization of hexagonal MnTe and ZnO layers
52. p-type conducting ZnO: fabrication and characterisation
53. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
54. Dynamics of spin interactions in II-Mn-VI semiconductors studied with time-resolved optically detected magnetic resonance
55. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
56. Fe photoionization transition in ZnSSe:Fe crystals - photo-ESR studies
57. In-depth and in-plane profiling of InGaN-based laser diodes and heterostructures
58. Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
59. Compensation mechanisms in magnesium doped GaN
60. Optical and magnetic resonance investigations of ZnO crystals doped with transition metal ions
61. Optical and ODMR study of GaN-based HEMT structures
62. Photo-ESR and optical studies of Cr photoionization transition in CdZnSe:Cr crystals
63. Luminescent properties of wide bandgap materials at room temperature
64. Mn doped ZnTe (110) (1x1) surface in Resonant Photoemission study