Optical and ODMR study of GaN-based HEMT structures
|Vitalii Y. Ivanov 1, Marek Godlewski 1,3, A. Khachapuridze 1, Sergiey Yatsunienko 1, Yu. Sveshnikov 2, A. Arendarenko 2|
1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
Processes of carrier localization, their scattering and trapping at impurities, but also at localization states, are very important for understanding transport mechanisms in III-nitrides based device oriented structures. In this communication we discuss results of PL and ODMR studies of GaN/AlGaN HEMT structures. We studied undoped and Si-doped GaN and AlGaN layers grown by MOCVD in (0001) orientated sapphire substrates. We start with discussion of PL spectra and then correlate their properties with growth conditions. For example, a parasitic yellow emission is observed in the samples grown with 30 nm GaN nucleation layer, containing high dislocation density.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Vitalii Y. Ivanov
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-27 15:54 Revised: 2009-06-08 12:55
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